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The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. A 10 Kilowatt, Rankin Cycle Agricultural Waste to Energy Conversion Module Utilizing Ultra Micro Turbo-Alternators

    SBC: Fluidic microControls, Inc.            Topic: H

    In 2011, there were 60,000 dairy farms in the US. Of there, 56,600 had herds of fewer than 500 animals. Currently, manure digester installations are only considered economical for herds of at least 500 animals. There require turbine or diesel generator sets of 100 Kilowatt size and larger. The need exists for a smaller waste to energy conversion approach for implementation on small farms were ...

    SBIR Phase II 2013 Environmental Protection Agency
  2. A Low-Cost, High-Performance Colloidal Quantum Dot LWIR FPA for Hyperspectral Imaging

    SBC: SIVANANTHAN LABORATORIES, INC.            Topic: CBD13105

    The primary goal of this proposed work is to develop a long wave infrared (LWIR) colloidal quantum dot (CQD)-based focal plane array (FPA) in order to significantly reduce the cost of LWIR hyperspectral imagers. In order to realize this goal, it will first be necessary to successfully fabricate and demonstrate the performance of novel LWIR HgTe CQD detector arrays. This will be accomplished thro ...

    SBIR Phase I 2013 Department of DefenseOffice for Chemical and Biological Defense
  3. Defect Passivation for High Performance HgCdTe on Si

    SBC: EPIR TECHNOLOGIES INC            Topic: MDA11T002

    The potential threat of directed energy weapons (DEW) and other high peak power electromagnetic transient signals require radar systems to implement front door protection against high power signals. Fast ultra wideband (UWB) and high power microwave (HPM) signals are not successfully blocked by most current protection technologies. The Phase I work demonstrated a quasi-passive, solid state e ...

    STTR Phase II 2013 Department of DefenseMissile Defense Agency
  4. Defect Reductions on Si Substrates for HgCdTe MBE Growth

    SBC: SIVANANTHAN LABORATORIES, INC.            Topic: MDA11T002

    In Phase I, Sivananthan Laboratories (SL) demonstrated the ability to polish Si(211) wafers, as supplied by a vendor with an already fine polish, to an even better surface smoothness and uniformity. SL also demonstrated the molecular beam epitaxy (MBE) growth of CdTe films with better crystalline quality and uniformity using SL-polished 2 cm x 2 cm Si(211) samples, compared to those grown on the ...

    STTR Phase II 2013 Department of DefenseMissile Defense Agency
  5. Detection of Liquid Contaminants on Surfaces Using Hyperspectral Imaging

    SBC: EPIR TECHNOLOGIES INC            Topic: CBD12104

    Quick detection of Chemical/Biological (CB) agents in the field can provide critical reconnaissance and contamination avoidance. CB agents pose a serious threat to both civilian and military sectors, and present techniques rely on dangerous collection methods, active measurement through external infrared (IR) sources, and/or are time-consuming. EPIR proposes to provide critically needed improvemen ...

    SBIR Phase I 2013 Department of DefenseOffice for Chemical and Biological Defense
  6. Development of high energy laser analysis software along with experimental verification of DPAL rate constants

    SBC: DIGITAL OPTICS TECHNOLOGIES INC            Topic: MDA12T008

    Under the work proposed here, we will develop a physics based comprehensive software for modeling the behavior of a diode pumped alkali laser: DPAL. The software will be designed primarily for a He-Rb DPAL. However, it could easily be applied to DPALs based on other alkali atoms, such as Cs. Furthermore, the model would be versatile enough to be applicable to other high energy lasers as well. ...

    STTR Phase I 2013 Department of DefenseMissile Defense Agency
  7. Fast-Running Physics-Based Models for Intercept Debris Aero-heating and Aero-thermal Demise

    SBC: SHEARWATER TECHNOLOGY INC            Topic: MDA12009

    Accurate prediction of aero-thermal demise of post-intercept debris is a high priority for the United States Missile Defense Agency (MDA). Predictive tools for assessing the aero-thermal demise of intercept debris are needed to support BMDS effectiveness evaluations, flight test and range safety operations, and consequence mitigation assessments. During this Phase I effort, Shearwater Technology ...

    SBIR Phase I 2013 Department of DefenseMissile Defense Agency
  8. High Performance Nanopillar Optical Antenna Avalanche Detector Operating at 1.06um

    SBC: Illinois Applied Research Associates LLC            Topic: MDA12014

    Three dimensional (3D) imaging and single-wavelength active sensors are very effective for distinguishing moving targets, such as missiles, from decoys and for cutting through natural clutter and thermal noise. For systems equipped with ALS to accurately acquire, track and point moving objects, extremely sensitive detectors are required to be able to provide the bandwidth and resolution necessary ...

    SBIR Phase I 2013 Department of DefenseMissile Defense Agency
  9. High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off

    SBC: MICROLINK DEVICES INC            Topic: 1

    In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...

    SBIR Phase I 2013 Department of EnergyARPA-E
  10. High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off

    SBC: MICROLINK DEVICES INC            Topic: DEFOA0000941

    "In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...

    SBIR Phase II 2013 Department of EnergyARPA-E
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