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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off
SBC: MICROLINK DEVICES INC Topic: DEFOA0000941"In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...
SBIR Phase II 2013 Department of EnergyARPA-E -
Advanced Manufacturing and Performance Enhancements for Reduced-cost Silicon Carbide MOSFETs (AMPERES)
SBC: MONOLITH SEMICONDUCTOR INC Topic: DEFOA0000941The team of Monolith Semiconductor, X-FAB Texas, Rensselaer, United Technologies and Univ. of Arkansas will provide breakthrough advances in switch performance and manufacturing cost reduction to deliver cost-effective 100Amp, 1200V SiC power MOSFETs to enable widespread adoption. Based on the combined expertise in both Silicon and SiC power device design and processing, Monolith Semiconductor is ...
SBIR Phase II 2013 Department of EnergyARPA-E -
Advanced Manufacturing and Performance Enhancements for Reduced-cost Silicon Carbide MOSFETs (AMPERES)
SBC: MONOLITH SEMICONDUCTOR INC Topic: N/AThe team of Monolith Semiconductor, X-FAB Texas, Rensselaer, United Technologies and Univ. of Arkansas will provide breakthrough advances in switch performance and manufacturing cost reduction to deliver cost-effective 100Amp, 1200V SiC power MOSFETs to enable widespread adoption. Based on the combined expertise in both Silicon and SiC power device design and processing, Monolith Semiconductor is ...
SBIR Phase II 2013 Department of EnergyARPA-E -
High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off
SBC: MICROLINK DEVICES INC Topic: 1In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...
SBIR Phase I 2013 Department of EnergyARPA-E -
Advanced Manufacturing and Performance Enhancements for Reduced-cost Silicon Carbide MOSFETs (AMPERES)
SBC: MONOLITH SEMICONDUCTOR INC Topic: 1The team of Monolith Semiconductor, X-FAB Texas, Rensselaer, United Technologies and Univ. of Arkansas will provide breakthrough advances in switch performance and manufacturing cost reduction to deliver cost-effective 100Amp, 1200V SiC power MOSFETs to enable widespread adoption. Based on the combined expertise in both Silicon and SiC power device design and processing, Monolith Semiconductor is ...
SBIR Phase I 2013 Department of EnergyARPA-E -
A 10 Kilowatt, Rankin Cycle Agricultural Waste to Energy Conversion Module Utilizing Ultra Micro Turbo-Alternators
SBC: Fluidic microControls, Inc. Topic: HIn 2011, there were 60,000 dairy farms in the US. Of there, 56,600 had herds of fewer than 500 animals. Currently, manure digester installations are only considered economical for herds of at least 500 animals. There require turbine or diesel generator sets of 100 Kilowatt size and larger. The need exists for a smaller waste to energy conversion approach for implementation on small farms were ...
SBIR Phase II 2013 Environmental Protection Agency -
SPHERICAL COVERAGE DUAL MODE SENSOR FOR UAS SEPARATION ASSURANCE
SBC: Epsilon Lambda Electronics Corp. Topic: A201Proposed is a dual-mode sensor for use aboard unmanned aircraft for safe operation in the NAS that:1. Incorporates high resolution Millimeter Wave radar with high resolution Electro-Optical sensor.2. Achieves complete real time, full time spherical coverage around the UAS platform by employing two hemispherical dual mode sensors, one directed forward and one directed to the rear.[which exceeds the ...
SBIR Phase I 2013 National Aeronautics and Space Administration -
Recession-Tolerant Heat Flux Sensors for Thermal Protection Systems
SBC: MESOSCRIBE TECHNOLOGIES, INC. Topic: H701The Phase I project will develop a suite of diagnostic sensors using Direct Write technology to measure temperature, surface recession depth, and heat flux of an ablative thermal protection system (TPS) in real time, which can be integrated to support TPS evaluation and in-situ diagnostics during planetary entry. Standalone heat flux sensors and those fabricated by direct deposition will be devel ...
SBIR Phase I 2013 National Aeronautics and Space Administration -
Comprehensive Simulation Lifecycle Management for High Performance Computing Modeling and Simulation
SBC: ILLINOISROCSTAR LLC Topic: S501There are significant logistical barriers to entry-level high performance computing (HPC) modeling and simulation (M & S) users. Performing large-scale, massively parallel computations on modern supercomputing platforms is a very challenging task in and of itself. It requires huge amounts of analyst resources to construct datasets, transfer files, build codes, submit and monitor jobs, and analyze ...
SBIR Phase I 2013 National Aeronautics and Space Administration -
Cost Reduction of IMM Solar Cells by Recycling Substrates Using Wet Chemical Etching
SBC: MICROLINK DEVICES INC Topic: H804This program focuses on reducing the cost of substrate reclaim for high-efficiency solar cells fabricated via an epitaxial lift-off (ELO) process, while increasing the number of reuse cycles possible for a given substrate. We will introduce a new multi-layer etch-stop structure into inverted metamorphic (IMM) triple-junction solar cells grown on 100-mm GaAs substrates. The etch-stop structure wi ...
SBIR Phase I 2013 National Aeronautics and Space Administration