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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Low Cost, Efficient Microchannel Plasma Ozone System for Point of Use Water Treatment

    SBC: EP Purification, Inc.            Topic: A

    A team at EP Purification has performed research for the development and commercialization of low-cost microchannel plasma reactor modules capable of efficiently producing ozone for water treatment and other environmental applications in a slim form factor and size. The conservation of water resources for human consumption is a growing national priority. Ozone is a unique purification agent as it ...

    SBIR Phase II 2014 Environmental Protection Agency
  2. Development of a Portable Microwave Atomic Clock Using Pulsed Coherent Population Trapping

    SBC: Digital Optics Technologies, Inc.            Topic: SB141004

    We propose to develop a low SWaP, portable microwave Rb-87 cold atomic clock using pulsed coherent population trapping (CPT). The SWaP goal is to achieve a volume of

    SBIR Phase I 2014 Department of DefenseDefense Advanced Research Projects Agency
  3. A Low-Cost, High-Performance Colloidal Quantum Dot MWIR Focal Plane Array

    SBC: SIVANANTHAN LABORATORIES, INC.            Topic: ST13B002

    The primary goal of this proposed effort is to develop mid-wavelength infrared (MWIR) colloidal quantum dot (CQD)-based focal plane arrays (FPAs) to significantly reduce the cost of MWIR photon imagers. In order to realize this goal, it will first be nec

    STTR Phase I 2014 Department of DefenseDefense Advanced Research Projects Agency
  4. High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off [Phase IIS]

    SBC: MicroLink Devices            Topic: 1

    In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...

    SBIR Phase II 2014 Department of EnergyARPA-E

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