Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Low Cost, Efficient Microchannel Plasma Ozone System for Point of Use Water Treatment

    SBC: EP Purification, Inc.            Topic: A

    A team at EP Purification has performed research for the development and commercialization of low-cost microchannel plasma reactor modules capable of efficiently producing ozone for water treatment and other environmental applications in a slim form factor and size. The conservation of water resources for human consumption is a growing national priority. Ozone is a unique purification agent as it ...

    SBIR Phase II 2014 Environmental Protection Agency
  2. GaN Substrate Technology

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negatively affects manufacturing yield and electronic devi ...

    SBIR Phase I 2014 Department of EnergyARPA-E
  3. Transformational GaN Substrate Technology

    SBC: KYMA TECHNOLOGIES, INC.            Topic: DEFOA0000941

    Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negatively affects manufacturing yield and electronic devi ...

    SBIR Phase II 2014 Department of EnergyARPA-E
  4. GaN Substrate Technology

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Kyma Technologies will develop a cost-effective technique to grow high-quality gallium nitride (GaN) by developing a high growth rate process for creating crystalline GaN boules, which are used as a starting material for semiconductor device manufacturing. Currently, growing boules from GaN seeds is slow, expensive, and inconsistent, which negatively affects manufacturing yield and electronic devi ...

    SBIR Phase II 2014 Department of EnergyARPA-E
  5. High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off [Phase IIS]

    SBC: MicroLink Devices            Topic: 1

    In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...

    SBIR Phase II 2014 Department of EnergyARPA-E
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