Award Data

In this PhaseII SBIR effort, Corvid Technologies completes the development of an innovative approach for solving Unstructured Fixed Grid Navier-Stokes CFD flow simulations. The proposed approach developed at Corvid is referred to as the Virtual Geometry Insertion (VGI) technique. This approach allows for the virtual insertion of arbitrary geometric components into a standard CFD analysis. This g ...

Improving efficiency and reliability of GaN-based FETs is paramount in enabling system insertion, both of which are limited by thermal effects and self heating in the devices. One factor limiting high voltage and high efficiency operation of GaN HEMTs is leakage current between the gate and drain at high drain bias. Pure screw dislocations arising from the lattice mismatch at the SiC substrate and ...

Large area semi-insulating GaN has the potential to impact the commercialization of many technologies such as power transistors, high frequency microwave amplifiers, and high-speed, high-power switching components. One of the limiting factors in many of these applications is the lack of commercially available large diameter substrates. This program will develop 4" diameter semi-insulating GaN su ...

In this program, Voxtel will demonstrate SOI-CMOS imagers for high-performance star tracking applications. Fabricating CMOS imagers on SOI wafers, allows the device and detector layers to be separated with an insulating layer, so each can be individually optimized and operated with separate ground returns. High QE and high MTF come from backside illumination and depleting the entire volume of dete ...

A highly reliable InAlAs/InGaAs avalanche photodiode (APD) focal plane array (FPA) will be developed to replace the electron-bombarded charge-coupled device (EBCCD) camera presently used for Airborne Laser (ABL) wavefront sensing applications. Based on technology with a nominal lifetime of 105 hours of continuous operation, Voxtel’s monolithic solid-state architecture is both more manufacturable ...

High quantum efficiency (QE), fast (

The single most important type of metal/SiC junction is the n-type, rectifying Schottky diode, because it is the voltage blocking junction in all majority carrier devices. A reliable junction of this type for n-type SiC is the key to its development for high temperature, power conditioning electronics. Phase I will demonstrate that osmium is the ideal metal for forming such junctions. Phase II wil ...

We propose a new epitaxial growth technology for low-defect SiC substrates based on metallic solution growth of SiC on silicon and SiC wafers. A significant feature of the our approach is the use of epitaxial lateral overgrowth for "defect filtering." In the Phase I proposal, we present arguments that the proposed technology will lead to SiC material of unprecedented quality with respect to defect ...

There is much need for lasers with emission wavelengths in the mid-infrared (2 to 5 microns) for applications that include molecular spectroscopy, environmental and atmospheric trace gas analysis, long haul fiber communications, laser surgery, and atmospheric free-space laser transmission. The Lebedev Physical Institute in Moscow has reported double heterostructure GaInAsSb/GaAlAsSb lasers emittin ...

AstroPower proposes to develop a new high voltage solar cell for photovoltaic linear concentrator arrays based on our thin GaAs solar cell and epitaxial lateral overgrowth technologies and applying lateral segment interconnection techniques. This solar cell design has several advantages which make it ideal for space concentrator systems. These are high system voltage (10 to 500 volts per cell), re ...