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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Model-Guided Development of Spin-Dependent-Tunnel Junctions for Magnetoelectronic Devices

    SBC: NVE CORP. (FORMERLY NONVOLATILE ELECTRONICS, INC.            Topic: NSF02056EL

    This Small Business Technology Transfer Phase II Program will demonstrate a magnetic field sensor device of high sensitivity using spin-dependent tunnel (SDT) materials. The tunnel materials will be developed with guidance from the state of the art realistic atomistic modeling and aided by state of the art nanostructural characterization techniques of 3-D atom probe and high-resolution transmissio ...

    STTR Phase II 2005 Department of DefenseDefense Advanced Research Projects Agency
  2. SIMON: Simulation and Modeling for SANs

    SBC: ARCHITECTURE TECHNOLOGY CORPORATION            Topic: N04T017

    The use of Net-Centric Enterprise Services (NCES) to provide ubiquitous access to information within the Department of Defense presents challenges in both the design and implementation of these systems. The need to provide information to the war-fighter in a timely manner while maintaining the security of the system in challenging environments far exceeds the capabilities of present day enterpris ...

    STTR Phase II 2005 Department of DefenseNavy
  3. Novel Materials for Ultra-Sensitive Low-Frequency Magnetometers

    SBC: NVE CORP. (FORMERLY NONVOLATILE ELECTRONICS, INC.            Topic: N05T025

    This work seeks to develop the ultra-low-frequency performance of spin-dependent-tunneling magnetic-field sensors through the use of novel thin-film materials to lower the frequency-dependent excess noise and increase the signal response. What is proposed is an investigation of novel thin film materials recently discovered to have high magnetoresistance effects. Magnetic sensor devices will be f ...

    STTR Phase I 2005 Department of DefenseNavy
  4. High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications

    SBC: SVT ASSOCIATES, INCORPORATED            Topic: A05T008

    A new Aluminum gallium nitride (AlGaN) based heterojunction field-effect transistor (HFET) structure is proposed that utilizes avalanche impact ionization for very high frequency operation (>100 GHz). The main goal of this program is to demonstrate the potential of these devices as a replacement for vacuum tubes in mm-wave applications including radars and communications transmitters. In the Pha ...

    STTR Phase I 2005 Department of DefenseArmy
  5. Plan Understanding & Mission Assessment (PUMA)

    SBC: Smart Information Flow Technologies, LLC            Topic: N05T017

    Two technologies with nearly perfect complementary capabilities are combined in this project. Univer-sity of Virginia has developed the Tactical Interface for Monitoring and Retargeting (TIMR), based on recent Tactical Tomahawk work. This provides decision aiding and an underlying simulation platform, but by design provides no autonomous planning capability. SIFT has developed PlaybookT, an int ...

    STTR Phase I 2005 Department of DefenseNavy
  6. Ruggedized Multifunction Fiber-Optic Transceiver Optical Subassembly

    SBC: Mytek, LLC            Topic: N05T005

    We will address the requirement for fault identification and isolation in fiber optic data links by incorporating an optical time domain reflectance (OTDR) functionality into the transceiver module. Our approach is to monolithically integrate a high speed photodetector that will sense reflections from discontinuities in the optical channel, with the 850nm VCSEL which transmits the signal.

    STTR Phase I 2005 Department of DefenseNavy

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