Award Data

The Phase I Project will develop a comprehensive model to evaluate and optimize state-of-the-art light-emitting diodes for optical memories, optical computing, and fiber or free-space photonic interconnects. The innovation is the development of resonant optical cavity LEDs and a proprietary low-cost epitaxy technology for their fabrication. A unified approach to the design of LEDs with resonant op ...

N/A

N/A

AS PAVEMENT MANAGEMENT SYSTEMS BECOME THE PRIMARY TOOL BY WHICH AGENCIES ALLOCATE THE FUNDS FOR PAVEMENT REHABILITATION, THE ACCURACY OF DISTRESS DATA. ONE OF THE LEAST EXPENSIVE BEING MANUAL DISTRESS SURVEYS. HOWEVER, MANUAL DISTRESS SURVEYS HAVE THEIR LIMITATIONS. INACCURACIES THAT ARISE IN THE ACCUMULATION AND SUMMARIZATION OF THE DISTRESS DATA CAN LIMIT OR IMPAIR ITS USE SIGNIFICANTLY. ONE WAY ...

A novel quantum well infrared photo transistor, which we call QWIPT, is proposed. By taking the advantage of the almost perfect alignment of the conduction band in GaAsSb/InAlAs system, it is possible to integrate such quantum wells into a QWIPT to improve the optical gain and, therefore, the detectivity of the p-QWIP. We expect, by incorporating molecular beam epitaxy growth interruption scheme, ...

N/A

A novel nitrogen beam source will provide 5 eV atomic and molecular nitrogen to a 0.5 cm diameter circle with a flux of 10(21)/cm(2)/sec. Larger areas can be irradiated with a lower flux (eg. 10(18)/cm(2)/sec over a 2" diameter wafer). The technique will put minimal gas load into the chamber so it will be compatible with ion pumped MBE systems. The source will be used in an attempt to synthesize c ...

A unique approach to formation of nitride materials using matrix isolation methods will be attempted. Large quantities of reactants can be prepared and forced to react under much more controlled conditions than in CVD or MBE. Important issues that will be addressed are epitaxial growth and growth rates, both of which can potentially be better than MBD. A very promising cluster beam approach will a ...

Using a combination of novel and traditional fabrication techniques, ultra-short gate (110nm) FETs have been fabricated which are sufficiently small, and have sufficiently low capacitance that single electron gating is observed. The devices also exhibit I-V hysteresis in the single electron switching as well as in the classical operation regime (from two different mechanisms). It is expected that ...

The use of electric power in aeronautical and space applications shows an increasing trend throughout the years. Equipment used for communication and navigation, control systems, pumps, actuators, precision timing devices, life support systems etc., all require electric power in some form. This creates a need for an invertor which offers: high efficiency, high power density, miniaturization, lower ...