Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until September, 2020.

  1. Dynamic Frequency Passive Millimeter-Wave Radiometer Based on Optical Up-Conversion

    SBC: Phase Sensitive Innovations, Inc.            Topic: 941D

    In the proposed effort, we will leverage this extensive experience and capabilities to realize a frequency agile mmW radiometer that can cover the range of DC-110 GHz and can be scaled to DC-200 GHz under Phase II. Ours is a photonic system that multiplies and up-coverts a low-frequency reference signal onto an optical carrier (laser) using EO modulation, then uses the modulation sidebands to inj ...

    SBIR Phase I 2013 Department of CommerceNational Oceanic and Atmospheric Administration
  2. ALUMINUM-GALLIUM-ARSENIDE TOP SOLAR CELL FOR MECHANICAL ATTACHMENT TO A SILICON CONCENTRATOR WITH IMPROVED AMO EFFICIENCY

    SBC: ASTROPOWER, INC.            Topic: N/A

    INCREASES IN SOLAR CELL EFFICIENCY CAN BE ACHIEVED WITH TANDEM MULTI-JUNCTION STRUCTURES TO IMPROVE THE PERFORMANCE AND SCALE OF SPACE PHOTOVOLTAIC CONCENTRATORS. THE "TOP SOLAR CELL" TANDEM APPROACH COULD INCREASE ENERGY CONVERSION EFFICIENCY BY AS MUCH AS 100%. A SELF-SUPPORTING ALUMINUM-GALLIUM-ARSENIDE (ALGAAS) TOP SOLAR CELL IS BEING DEVELOPED FOR MECHANICAL ATTACHMENT TO A SILICON CONCENTRAT ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
  3. HIGH TEMPERATURE SURVIVABLE CONTACTS FOR GALLIUM ARSENIDE SPACE SOLAR CELLS

    SBC: ASTROPOWER, INC.            Topic: N/A

    EXISTING METALLIC-TYPE CONTACTS ON GALLIUM ARSENIDE (GAAS) HAVE NOT BEEN STABLE AT HIGH TEMPERATURES BECAUSE OF INTERDIFFUSION AND/OR ALLOYING OF THE GAAS TOP LAYER. HIGH TEMPERATURE CONTACTS TO GAAS SPACE PHOTOLTAIC CELLS ARE BEING DEVELOPED BASED ON THE FORMATION OF A HIGHLY-STABLE INTERMEDIATE DEGENERATE SEMICONDUCTOR LAYER BETWEEN THE GAAS AND A HIGH TEMPERATURE METAL ALLOY. THE INTERMEDIATE S ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
  4. THIN CRYSTALLINE INDIUM-PHOSPHIDE ON INSULATING SUBSTRATES

    SBC: ASTROPOWER, INC.            Topic: N/A

    UNIFORM LARGE AREA, DEVICE QUALITY INDIUM PHOSPHIDE (INP) EPITAXIAL LAYERS ON INSULATING SUBSTRATES COULD LEAD TO THE DEVELOPMENT OF A NEW GENERATION OF PRODUCIBLE, RADIATION-HARDENED MICROELECTRONIC AND OPTOELECTRONIV INTEGRATED CIRCUITS. INP ALLOYS OFFER THE ADVANTAGES OF: PROVEN RESISTANCE TO RADIATION DAMAGE; LOWER SURFACE RECOMBINATION THAN GAAS; HIGH PEAK ELECTRON VELOCITY; AND BANDGAPS THAT ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
  5. HIGH TEMPERATURE SURVIVABLE INDIUM PHOSPHIDE SOLAR CELLS

    SBC: ASTROPOWER, INC.            Topic: N/A

    HIGH TEMPERATURE (>600 DEGREES CELSIUS) INDIUM PHOSPHIDE (INP) SPACE SOLAR CELLS ARE BEING DEVELOPED TO ELIMINATE THEPROBLEMS, SURFACE DECOMPOSITION AND CONTACT FAILURE, ENCOUNTERED WHEN INP SOLAR CELLS ARE EXPOSED TO HIGH TEMPERATURES. KEY TO THIS PROGRAM ARE THE USE OF AN ENCAPSULANT LAYER TO ARREST SURFACE DECOMPOSITION AND A HIGHLY-STABLE INTERMEDIATE DEGENERATE SEMICONDUCTOR CONTACT SYSTEM DE ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
  6. HIGH-PERFORMANCE RADIATION-HARD ULTRA-THIN SILICON-UNDER-GLASS SOLAR CELLS

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency
  7. HIGH-PERFORMANCE RADIATION-HARD ULTRA-THIN SILICON-UNDER-GLASS SOLAR CELLS

    SBC: ASTROPOWER, INC.            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency
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