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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Rapid, Low-Cost, Reformable Tooling for Prototyping and Short-run Manufacturing of Advanced Composite Structures

    SBC: 2PHASE TECHNOLOGIES, INC.            Topic: MDA03049

    The proposing company's reformable, reusable tooling can substantially reduce the time, cost and effort associated with conventional or alternative tooling while providing the flexibility for prototyping iterations, short-run or low rate manufacture through lengthy product cycles. This Phase II project addresses the use of reformable tooling materials and tooling systems for the production of prot ...

    SBIR Phase II 2004 Department of DefenseMissile Defense Agency
  2. Growth of large-area, single-crystalline AlN substrates (Subtopic A: Electronic Materials)

    SBC: HEXATECH            Topic: N/A

    Teh objective of the proposed work is to develop a process for the fabrication large-area aluminum nitride (AlN) wafers of up to 2" in diameter for III-nitride substrate applications. The growth process is based on a sublimation technique that utilizes adequately prepared SiC wafers as large-area seeds. A multi-step process developed in Phase I will be upscaled to larger area deposition, and will ...

    STTR Phase I 2004 Department of DefenseMissile Defense Agency
  3. Growth of large-area, single-crystalline AlN substrates (Subtopic A: Electronic Materials)

    SBC: HEXATECH            Topic: BMDO02T00

    Teh objective of the proposed work is to develop a process for the fabrication large-area aluminum nitride (AlN) wafers of up to 2" in diameter for III-nitride substrate applications. The growth process is based on a sublimation technique that utilizes adequately prepared SiC wafers as large-area seeds. A multi-step process developed in Phase I will be upscaled to larger area deposition, and will ...

    STTR Phase II 2004 Department of DefenseMissile Defense Agency
  4. Ultra-high strain, single crystals and a Monolithic Mirror-Flexure Mechanism for Fast Steering Mirrors

    SBC: INSITUTEC, INC.            Topic: MDA04069

    The goal of this collaborative effort between InsituTec Inc. (NC), TRS Technologies Inc. (Pa) and Center for Precision Metrology at University of North Carolina at Charlotte, NC is to demonstrate the closed loop control of a high-speed, long-range rotational stage. This proposal addresses design, manufacture and testing of a high-bandwidth steering-mirror employing a monolithic mirror-flexure stru ...

    SBIR Phase I 2004 Department of DefenseMissile Defense Agency
  5. Advanced Gallium Nitride Microelectronic Devices Produced on Gallium Nitride Substrates

    SBC: KYMA TECHNOLOGIES, INC.            Topic: MDA02047

    Kyma Technologies, Inc. will demonstrate high-performance gallium nitride (GaN) microelectronic devices for X-band radar applications using single crystal semi-insulating GaN substrates. FETs for power amplifiers will benefit from lower defects resulting from growth on a native GaN substrate. The thermal conductivity of the GaN substrates will be characterized and device structures will be modeled ...

    SBIR Phase II 2004 Department of DefenseMissile Defense Agency
  6. Advanced Manufacturing Process for Growth of Gallium Nitride Crystals

    SBC: KYMA TECHNOLOGIES, INC.            Topic: MDA02021b

    Gallium nitride substrates are now being produced by several manufacturers, however significant market penetration is being limited by high prices and low quantities. This Phase II program is aimed at addressing both of these issues by developing a growth process for the production of 1cm thick boules at a growth rate of 1mm per hour. The Phase I program met and exceeded the goals of demonstrati ...

    SBIR Phase II 2004 Department of DefenseMissile Defense Agency
  7. Development of 4 inch Semi-Insulating Gallium Nitride Substrates

    SBC: KYMA TECHNOLOGIES, INC.            Topic: MDA04T018

    High-performance GaN-based devices, such as microwave transistors, laser diodes and light emitting diodes have been demonstrated on sapphire and silicon carbide substrates. Gallium nitride substrates are expected to further improve the performance of these devices due to close lattice and thermal expansion match with GaN-based device structures. The development of a low defect density semi insulat ...

    STTR Phase I 2004 Department of DefenseMissile Defense Agency
  8. Fabrication of GaN Schottky Diode Power Rectifiers on GaN Substrates Using Advanced Metal Contacts

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    The Phase II STTR will demonstrate the device operation of a GaN Schottky diode power rectifier. Kyma Technologies, Inc. will collaborate with investigators at Auburn University and North Carolina State University for materials growth/characterization and device fabrication/testing. The fabrication of a conventional Schottky diode relies on heteroepitaxy on lattice- and thermal-mismatched foreig ...

    STTR Phase I 2004 Department of DefenseMissile Defense Agency
  9. Fabrication of GaN Schottky Diode Power Rectifiers on GaN Substrates Using Advanced Metal Contacts

    SBC: KYMA TECHNOLOGIES, INC.            Topic: BMDO02T00

    The Phase II STTR will demonstrate the device operation of a GaN Schottky diode power rectifier. Kyma Technologies, Inc. will collaborate with investigators at Auburn University and North Carolina State University for materials growth/characterization and device fabrication/testing. The fabrication of a conventional Schottky diode relies on heteroepitaxy on lattice- and thermal-mismatched foreig ...

    STTR Phase II 2004 Department of DefenseMissile Defense Agency
  10. Distributed Optoelectronic Crossbar Modules for Backplane Applications

    SBC: OPTICOMP CORP.            Topic: BMDO00011

    The primary goal of the proposed Phase II effort is to develop monolithic distributed optoelectronic crossbar modules for implementation of high performance distributed crossbar backplanes. The high density monolithic crossbar modules will enable distributed backplane architectures that are highly scalable. In addition, the distributed crossbar modules will provide backplanes that are high speed ...

    SBIR Phase II 2004 Department of DefenseMissile Defense Agency

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