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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Rapid, Low-Cost, Reformable Tooling for Prototyping and Short-run Manufacturing of Advanced Composite Structures

    SBC: 2PHASE TECHNOLOGIES, INC.            Topic: MDA03049

    The proposing company's reformable, reusable tooling can substantially reduce the time, cost and effort associated with conventional or alternative tooling while providing the flexibility for prototyping iterations, short-run or low rate manufacture through lengthy product cycles. This Phase II project addresses the use of reformable tooling materials and tooling systems for the production of prot ...

    SBIR Phase II 2004 Department of DefenseMissile Defense Agency
  2. An Innovative Laser-Based Sensor for Monitoring Mercury in Gasifier Syngas

    SBC: Advanced Monitoring, Inc.            Topic: 42

    75867 Mercury (Hg) emissions are an important environmental problem because Hg is a volatile heavy metal that is toxic and bioaccumulates to a high degree in animals and humans. The major sources of Hg emissions include fossil fuel combustion, waste incineration, and chloralkali production. With the increased development of coal gasification technologies, the monitoring of Hg in gasifier synthe ...

    SBIR Phase I 2004 Department of Energy
  3. Thinner Silicon Detectors and Novel Interconnections for Robust High Energy Physics Detectors

    SBC: DIGITAL OPTICS CORP.            Topic: 8

    76214-Next generation experiments in High Energy Physics require the use of thinned detectors with high density interconnects; however, present manufacturing techniques for wafer thinning produce very low yields. Standard processing techniques have proven to be unacceptable for the production of high pixel count detector assemblies. Therefore, this project will develop technology for plasma-etch ...

    STTR Phase I 2004 Department of Energy
  4. Novel, Active Layer Nanostructures for White Light Emitting Diodes (LEDS)

    SBC: Dot Metrics Technologies, Inc.            Topic: 36

    75630-The most efficient solid-state white lights developed so far typically use a bright blue light emitting diode. The diode is used not only as a blue source, but also for the simultaneous optical excitement of an inorganic downconverter, which converts a fraction of the blue light to yellow. When the yellow light is mixed with the remaining blue, it is perceived by the human eye as white. H ...

    SBIR Phase I 2004 Department of Energy
  5. Cost Reducing Solar Domestic-Water-Heater Innovations

    SBC: EnvirosafeTechnologies            Topic: 39

    75487-Restricted natural gas supplies, reduced peak electrical capacity, and steadily increasing demand for domestic water heating are placing a strain on limited conventional energy resources. Water heating is one of the most practical uses of solar energy; efficiencies for solar water heaters often exceed 75% compared to 15% for typical photovoltaic systems. However, despite rising conventiona ...

    STTR Phase I 2004 Department of Energy
  6. Growth of large-area, single-crystalline AlN substrates (Subtopic A: Electronic Materials)

    SBC: HEXATECH            Topic: N/A

    Teh objective of the proposed work is to develop a process for the fabrication large-area aluminum nitride (AlN) wafers of up to 2" in diameter for III-nitride substrate applications. The growth process is based on a sublimation technique that utilizes adequately prepared SiC wafers as large-area seeds. A multi-step process developed in Phase I will be upscaled to larger area deposition, and will ...

    STTR Phase I 2004 Department of DefenseMissile Defense Agency
  7. Growth of large-area, single-crystalline AlN substrates (Subtopic A: Electronic Materials)

    SBC: HEXATECH            Topic: BMDO02T00

    Teh objective of the proposed work is to develop a process for the fabrication large-area aluminum nitride (AlN) wafers of up to 2" in diameter for III-nitride substrate applications. The growth process is based on a sublimation technique that utilizes adequately prepared SiC wafers as large-area seeds. A multi-step process developed in Phase I will be upscaled to larger area deposition, and will ...

    STTR Phase II 2004 Department of DefenseMissile Defense Agency
  8. Ultra-high strain, single crystals and a Monolithic Mirror-Flexure Mechanism for Fast Steering Mirrors

    SBC: INSITUTEC, INC.            Topic: MDA04069

    The goal of this collaborative effort between InsituTec Inc. (NC), TRS Technologies Inc. (Pa) and Center for Precision Metrology at University of North Carolina at Charlotte, NC is to demonstrate the closed loop control of a high-speed, long-range rotational stage. This proposal addresses design, manufacture and testing of a high-bandwidth steering-mirror employing a monolithic mirror-flexure stru ...

    SBIR Phase I 2004 Department of DefenseMissile Defense Agency
  9. Advanced Gallium Nitride Microelectronic Devices Produced on Gallium Nitride Substrates

    SBC: KYMA TECHNOLOGIES, INC.            Topic: MDA02047

    Kyma Technologies, Inc. will demonstrate high-performance gallium nitride (GaN) microelectronic devices for X-band radar applications using single crystal semi-insulating GaN substrates. FETs for power amplifiers will benefit from lower defects resulting from growth on a native GaN substrate. The thermal conductivity of the GaN substrates will be characterized and device structures will be modeled ...

    SBIR Phase II 2004 Department of DefenseMissile Defense Agency
  10. Advanced Manufacturing Process for Growth of Gallium Nitride Crystals

    SBC: KYMA TECHNOLOGIES, INC.            Topic: MDA02021b

    Gallium nitride substrates are now being produced by several manufacturers, however significant market penetration is being limited by high prices and low quantities. This Phase II program is aimed at addressing both of these issues by developing a growth process for the production of 1cm thick boules at a growth rate of 1mm per hour. The Phase I program met and exceeded the goals of demonstrati ...

    SBIR Phase II 2004 Department of DefenseMissile Defense Agency
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