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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Rapid, Low-Cost, Reformable Tooling for Prototyping and Short-run Manufacturing of Advanced Composite Structures
SBC: 2PHASE TECHNOLOGIES, INC. Topic: MDA03049The proposing company's reformable, reusable tooling can substantially reduce the time, cost and effort associated with conventional or alternative tooling while providing the flexibility for prototyping iterations, short-run or low rate manufacture through lengthy product cycles. This Phase II project addresses the use of reformable tooling materials and tooling systems for the production of prot ...
SBIR Phase II 2004 Department of DefenseMissile Defense Agency -
Growth of large-area, single-crystalline AlN substrates (Subtopic A: Electronic Materials)
SBC: HEXATECH Topic: N/ATeh objective of the proposed work is to develop a process for the fabrication large-area aluminum nitride (AlN) wafers of up to 2" in diameter for III-nitride substrate applications. The growth process is based on a sublimation technique that utilizes adequately prepared SiC wafers as large-area seeds. A multi-step process developed in Phase I will be upscaled to larger area deposition, and will ...
STTR Phase I 2004 Department of DefenseMissile Defense Agency -
Growth of large-area, single-crystalline AlN substrates (Subtopic A: Electronic Materials)
SBC: HEXATECH Topic: BMDO02T00Teh objective of the proposed work is to develop a process for the fabrication large-area aluminum nitride (AlN) wafers of up to 2" in diameter for III-nitride substrate applications. The growth process is based on a sublimation technique that utilizes adequately prepared SiC wafers as large-area seeds. A multi-step process developed in Phase I will be upscaled to larger area deposition, and will ...
STTR Phase II 2004 Department of DefenseMissile Defense Agency -
Hypergolic Swirl Injectors for Advanced Divert and Attitude Control Systems
SBC: IN SPACE, L.L.C. Topic: MDA04051The majority of liquid bipropellant engines in the United States employ impinging jet injectors. While they offer moderately high combustion efficiency and are design from an extensive knowledgebase, impinging jet injectors have several drawbacks including low thrust per element, instabilities, injector face erosion, high production costs, and inability to throttle. The bi-centrifugal swirl inje ...
SBIR Phase I 2004 Department of DefenseMissile Defense Agency -
Lightweight Liquid Target Booster Thrust Chamber Assembly
SBC: IN SPACE, L.L.C. Topic: MDA03T005MDA is interested in the development of hydrogen peroxide/hydrocarbon engines for liquid target vehicles. A large reduction in engine weight (~75%) and technical risk are possible by eliminating the large catalyst beds that decompose the hydrogen peroxide before it enters the combustion chamber, providing temperatures that are sufficient for fuel autoignition. A Fastrack Phase II proposal to dev ...
STTR Phase II 2004 Department of DefenseMissile Defense Agency -
Lightweight Liquid Target Booster Thrust Chamber Assembly
SBC: IN SPACE, L.L.C. Topic: N/AMDA is interested in the development of hydrogen peroxide/hydrocarbon engines for liquid target vehicles. A large reduction in engine weight (~75%) and technical risk are possible by eliminating the large catalyst beds that decompose the hydrogen peroxide before it enters the combustion chamber, providing temperatures that are sufficient for fuel autoignition. A Fastrack Phase II proposal to dev ...
STTR Phase I 2004 Department of DefenseMissile Defense Agency -
Ultra-high strain, single crystals and a Monolithic Mirror-Flexure Mechanism for Fast Steering Mirrors
SBC: INSITUTEC, INC. Topic: MDA04069The goal of this collaborative effort between InsituTec Inc. (NC), TRS Technologies Inc. (Pa) and Center for Precision Metrology at University of North Carolina at Charlotte, NC is to demonstrate the closed loop control of a high-speed, long-range rotational stage. This proposal addresses design, manufacture and testing of a high-bandwidth steering-mirror employing a monolithic mirror-flexure stru ...
SBIR Phase I 2004 Department of DefenseMissile Defense Agency -
Advanced Gallium Nitride Microelectronic Devices Produced on Gallium Nitride Substrates
SBC: KYMA TECHNOLOGIES, INC. Topic: MDA02047Kyma Technologies, Inc. will demonstrate high-performance gallium nitride (GaN) microelectronic devices for X-band radar applications using single crystal semi-insulating GaN substrates. FETs for power amplifiers will benefit from lower defects resulting from growth on a native GaN substrate. The thermal conductivity of the GaN substrates will be characterized and device structures will be modeled ...
SBIR Phase II 2004 Department of DefenseMissile Defense Agency -
Advanced Manufacturing Process for Growth of Gallium Nitride Crystals
SBC: KYMA TECHNOLOGIES, INC. Topic: MDA02021bGallium nitride substrates are now being produced by several manufacturers, however significant market penetration is being limited by high prices and low quantities. This Phase II program is aimed at addressing both of these issues by developing a growth process for the production of 1cm thick boules at a growth rate of 1mm per hour. The Phase I program met and exceeded the goals of demonstrati ...
SBIR Phase II 2004 Department of DefenseMissile Defense Agency -
Development of 4 inch Semi-Insulating Gallium Nitride Substrates
SBC: KYMA TECHNOLOGIES, INC. Topic: MDA04T018High-performance GaN-based devices, such as microwave transistors, laser diodes and light emitting diodes have been demonstrated on sapphire and silicon carbide substrates. Gallium nitride substrates are expected to further improve the performance of these devices due to close lattice and thermal expansion match with GaN-based device structures. The development of a low defect density semi insulat ...
STTR Phase I 2004 Department of DefenseMissile Defense Agency