Award Data

The proposing company's reformable, reusable tooling can substantially reduce the time, cost and effort associated with conventional or alternative tooling while providing the flexibility for prototyping iterations, short-run or low rate manufacture through lengthy product cycles. This Phase II project addresses the use of reformable tooling materials and tooling systems for the production of prot ...

Teh objective of the proposed work is to develop a process for the fabrication large-area aluminum nitride (AlN) wafers of up to 2" in diameter for III-nitride substrate applications. The growth process is based on a sublimation technique that utilizes adequately prepared SiC wafers as large-area seeds. A multi-step process developed in Phase I will be upscaled to larger area deposition, and will ...

Teh objective of the proposed work is to develop a process for the fabrication large-area aluminum nitride (AlN) wafers of up to 2" in diameter for III-nitride substrate applications. The growth process is based on a sublimation technique that utilizes adequately prepared SiC wafers as large-area seeds. A multi-step process developed in Phase I will be upscaled to larger area deposition, and will ...

The goal of this collaborative effort between InsituTec Inc. (NC), TRS Technologies Inc. (Pa) and Center for Precision Metrology at University of North Carolina at Charlotte, NC is to demonstrate the closed loop control of a high-speed, long-range rotational stage. This proposal addresses design, manufacture and testing of a high-bandwidth steering-mirror employing a monolithic mirror-flexure stru ...

Kyma Technologies, Inc. will demonstrate high-performance gallium nitride (GaN) microelectronic devices for X-band radar applications using single crystal semi-insulating GaN substrates. FETs for power amplifiers will benefit from lower defects resulting from growth on a native GaN substrate. The thermal conductivity of the GaN substrates will be characterized and device structures will be modeled ...

Gallium nitride substrates are now being produced by several manufacturers, however significant market penetration is being limited by high prices and low quantities. This Phase II program is aimed at addressing both of these issues by developing a growth process for the production of 1cm thick boules at a growth rate of 1mm per hour. The Phase I program met and exceeded the goals of demonstrati ...

High-performance GaN-based devices, such as microwave transistors, laser diodes and light emitting diodes have been demonstrated on sapphire and silicon carbide substrates. Gallium nitride substrates are expected to further improve the performance of these devices due to close lattice and thermal expansion match with GaN-based device structures. The development of a low defect density semi insulat ...

The Phase II STTR will demonstrate the device operation of a GaN Schottky diode power rectifier. Kyma Technologies, Inc. will collaborate with investigators at Auburn University and North Carolina State University for materials growth/characterization and device fabrication/testing. The fabrication of a conventional Schottky diode relies on heteroepitaxy on lattice- and thermal-mismatched foreig ...

The Phase II STTR will demonstrate the device operation of a GaN Schottky diode power rectifier. Kyma Technologies, Inc. will collaborate with investigators at Auburn University and North Carolina State University for materials growth/characterization and device fabrication/testing. The fabrication of a conventional Schottky diode relies on heteroepitaxy on lattice- and thermal-mismatched foreig ...

The primary goal of the proposed Phase II effort is to develop monolithic distributed optoelectronic crossbar modules for implementation of high performance distributed crossbar backplanes. The high density monolithic crossbar modules will enable distributed backplane architectures that are highly scalable. In addition, the distributed crossbar modules will provide backplanes that are high speed ...