Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Radiation Fault Analysis for 45 Nanometer CMOS-SOI VLSI Circuits

    SBC: Lynguent, Inc.            Topic: DTRA092001

    State of the art Radiation Hardened by Design (RHBD) techniques must scale down in feature size for radiation effects in 45 nm processes, and also scale up in complexity to support radiation fault analysis of VLSI circuits. Recent access to commercial 45 nm CMOS Silicon-on-Insulator (SOI) technologies has increased the interest in this technology for rad-hard electronic applications due to the in ...

    SBIR Phase I 2010 Department of DefenseDefense Threat Reduction Agency
  2. HIGH EFFICIENCY COMPACT MODELING OF RADIATION EFFECTS

    SBC: Lynguent, Inc.            Topic: DTRA05001

    The objective of this research is to develop beta versions of tools for automatically migrating radiation effects predicted in TCAD level tools to compact modeling tools. This transition will enable compact models that possess radiation effects to be quickly generated, which can then be used in circuit design activity. This approach is a substantial improvement over the current ad hoc approaches. ...

    SBIR Phase II 2006 Department of DefenseDefense Threat Reduction Agency
US Flag An Official Website of the United States Government