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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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High Quantum Efficiency Fast Detectors for Readout of Scintillators for Gamma Ray Detection
SBC: VOXTEL, INC. Topic: HSB062007High quantum efficiency (QE), fast (
SBIR Phase I 2006 Department of Homeland Security -
AlGaN/GaN HFETs on Silicon for BMDS X-Band Radars
SBC: Nitronex Corporation Topic: MDA06T012In this program, we will combine commercially available AlGaN/GaN on Si FETs with short gates such that the high frequency performance (X-band and higher) can be significantly increased. The AlGaN/GaN material system has significant advantages over the incumbent technology for X-band applications; specifically, AlGaN/GaN FETs have much higher power density which translates into broader bandwidth. ...
STTR Phase I 2006 Department of DefenseMissile Defense Agency -
Real-time Atmospheric Disturbance Compensation Using Hardware-Accelerated Speckle Imaging
SBC: EM PHOTONICS INC Topic: MDA06T006Atmospheric disturbances are a major performance-limiting factor in long-range optical systems. In particular, for the Airborne Laser (ABL) the ability of distinguish targets from a long distance is crucial for mission success. Despite the progress in optics and sensor technology, blurring in long-range imaging caused by atmospheric movements and density changes will remain an issue. Digital si ...
STTR Phase I 2006 Department of DefenseMissile Defense Agency -
Unstructured Fixed Grid with Moving Body, Navier-Stokes Computational Fluid Dynamic (CFD) Solver for Simulating Gas Flows
SBC: CORVID TECHNOLOGIES, LLC Topic: MDA04136In this PhaseII SBIR effort, Corvid Technologies completes the development of an innovative approach for solving Unstructured Fixed Grid Navier-Stokes CFD flow simulations. The proposed approach developed at Corvid is referred to as the Virtual Geometry Insertion (VGI) technique. This approach allows for the virtual insertion of arbitrary geometric components into a standard CFD analysis. This g ...
SBIR Phase II 2006 Department of DefenseMissile Defense Agency -
Manufacturing Process for Semi-insulating 4" Diameter GaN Substrates
SBC: KYMA TECHNOLOGIES, INC. Topic: MDA05019Large area semi-insulating GaN has the potential to impact the commercialization of many technologies such as power transistors, high frequency microwave amplifiers, and high-speed, high-power switching components. One of the limiting factors in many of these applications is the lack of commercially available large diameter substrates. This program will develop 4" diameter semi-insulating GaN su ...
SBIR Phase I 2006 Department of DefenseMissile Defense Agency -
Uncooled, Long-Life Wavefront/Tracking Sensor
SBC: VOXTEL, INC. Topic: MDA04105A highly reliable InAlAs/InGaAs avalanche photodiode (APD) focal plane array (FPA) will be developed to replace the electron-bombarded charge-coupled device (EBCCD) camera presently used for Airborne Laser (ABL) wavefront sensing applications. Based on technology with a nominal lifetime of 105 hours of continuous operation, Voxtel’s monolithic solid-state architecture is both more manufacturable ...
SBIR Phase II 2006 Department of DefenseMissile Defense Agency -
High Electrical Efficiency GaN FETs for Innovative Radar/RF Sensors
SBC: KYMA TECHNOLOGIES, INC. Topic: MDA05035Improving efficiency and reliability of GaN-based FETs is paramount in enabling system insertion, both of which are limited by thermal effects and self heating in the devices. One factor limiting high voltage and high efficiency operation of GaN HEMTs is leakage current between the gate and drain at high drain bias. Pure screw dislocations arising from the lattice mismatch at the SiC substrate and ...
SBIR Phase I 2006 Department of DefenseMissile Defense Agency -
Radiation Hard, High Precision, Agile Star Tracker
SBC: VOXTEL, INC. Topic: MDA05030In this program, Voxtel will demonstrate SOI-CMOS imagers for high-performance star tracking applications. Fabricating CMOS imagers on SOI wafers, allows the device and detector layers to be separated with an insulating layer, so each can be individually optimized and operated with separate ground returns. High QE and high MTF come from backside illumination and depleting the entire volume of dete ...
SBIR Phase I 2006 Department of DefenseMissile Defense Agency -
AlN single crystals for photonic applications
SBC: HEXATECH Topic: N/AThe objective of proposed work is to demonstrate that AlN single crystals are suitable for nonlinear optical (NLO) and electro-optic (EO) applications in the visible and UV spectral ranges. AlN is a promising material for photonic applications that requireUV-compatibility, mechanical, chemical and optical robustness, as well as radiation hardness. As a non-centrosymmetric material, AlN has a 2nd o ...
SBIR Phase I 2003 Department of DefenseMissile Defense Agency -
Growth of GaN single crystals (BMD002-014A)
SBC: HEXATECH Topic: N/AThrough the proposed research, we plan to demonstrate the feasibility of the ammonothermal growth method for commercial production of high quality GaN crystals. This will be achieved by fabrication of a classical autoclave especially designed for thisprocess, demonstration of adequate solubility, and demonstration of transport and re-deposition of the material on GaN seeds. The ammonothermal cry ...
SBIR Phase I 2003 Department of DefenseMissile Defense Agency