Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. High Efficiency, Large-Area, 1550 nm InGaAs Photodiodes

    SBC: VOXTEL, INC.            Topic: N/A

    A back-illuminated planar InGaAs photodiode tested to have 95% quantum effiiency (QE) at 1550 nm, area greater than 1 mm2, low capacitance (<23 pF), and high bandwidth (>125 MHz) will be improved. Although the existing Phase I device exhibited bulk material dark current generation better than commercially available devices, the sidewall-generated dark current was found to dominate the noise ...

    SBIR Phase II 2010 Department of CommerceNational Institute of Standards and Technology
  2. Radiation Fault Analysis for 45 Nanometer CMOS-SOI VLSI Circuits

    SBC: Lynguent, Inc.            Topic: DTRA092001

    State of the art Radiation Hardened by Design (RHBD) techniques must scale down in feature size for radiation effects in 45 nm processes, and also scale up in complexity to support radiation fault analysis of VLSI circuits. Recent access to commercial 45 nm CMOS Silicon-on-Insulator (SOI) technologies has increased the interest in this technology for rad-hard electronic applications due to the in ...

    SBIR Phase I 2010 Department of DefenseDefense Threat Reduction Agency
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