Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until September, 2020.

  1. 3-D LADAR Polarimeter

    SBC: VOXTEL, INC.            Topic: N/A

    Polarization will increasingly be an important tool in ballistic missile defense. However, in practice, implementing a robust polarimetric system necessitates addressing a number of complex issues and challenges. Furthermore, polarimetric systems,traditionally have relied on spatial or sequential scanning mechanisms to record the multi-dimensional datacube. Due to spatial and/or temporal aliasing, ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  2. Active/Passive Two-color Infrared Focal Plane

    SBC: VOXTEL, INC.            Topic: N/A

    We will optimize the design of a monolithic, highly-integrated, active/passive, two-color infrared detector capable of S/MWIR avalanche photodetection, (S)MWIR passive photodetection, or LWIR passive photodetection. The structure is constructed usingback-to-back photodiodes (one designed for unity gain or avalanche operation) manufactured with well-established, band-engineered HgCdTe heterostructu ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  3. Advanced Gallium Nitride Microelectronic Devices Produced on Gallium Nitride Substrates

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    This program will demonstrate high-performance GaN microelectronic devices for X-band radar applications by using novel device designs and single crystal gallium nitride substrates. FETs for power amplifiers will benefit from lower defects resulting fromgrowth on a native GaN substrate, improved device design, including features such as gate recess and passivation layers, and device cooling. The m ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  4. Advanced Manufacturing Process for Growth of Gallium Nitride Crystals

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Gallium nitride crystal growth has gained more attention as the need for a homoepitaxial substrate for GaN devices has increased. Kyma Technologies proposes to develop an advanced manufacturing process capable of growing single crystal GaN at growth ratesin excess of 1mm/hr. 50mm single crystal GaN substrates produced by Kyma Technologies will be used as the seed material to ensure thermal and l ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  5. AlN single crystals for photonic applications

    SBC: HEXATECH            Topic: N/A

    The objective of proposed work is to demonstrate that AlN single crystals are suitable for nonlinear optical (NLO) and electro-optic (EO) applications in the visible and UV spectral ranges. AlN is a promising material for photonic applications that requireUV-compatibility, mechanical, chemical and optical robustness, as well as radiation hardness. As a non-centrosymmetric material, AlN has a 2nd o ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  6. Gallium Nitride Devices on Semi-insulating Gallium Nitride Substrates for Advanced T/R Modules

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Existing T/R modules are based on gallium arsenide (GaAs) transistors and power amplifiers. Current and future XBRs would benefit from improved resolution, enhanced discrimination, and increased power. Significant XBR performance enhancement can beachieved by developing T/R modules that incorporate gallium nitride (GaN) -based power amplifiers. High-performance GaN-based devices, such as HEMTs, h ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  7. Gallium Nitride Wafer Surface Preparation for Epitaxial Growth

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Kyma Technologies has produced prototype 2

    SBIR Phase II 2003 Department of DefenseMissile Defense Agency
  8. Growth of GaN single crystals (BMD002-014A)

    SBC: HEXATECH            Topic: N/A

    Through the proposed research, we plan to demonstrate the feasibility of the ammonothermal growth method for commercial production of high quality GaN crystals. This will be achieved by fabrication of a classical autoclave especially designed for thisprocess, demonstration of adequate solubility, and demonstration of transport and re-deposition of the material on GaN seeds. The ammonothermal cry ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  9. High Reliability, Radiation Hard, Electron Bombarded SOI CMOS Image Tubes

    SBC: VOXTEL, INC.            Topic: N/A

    Electron-bombarded sensors have been researched for over thirty years and the general theory of operation has been proven and prototype devices demonstrated. However thus far, they have yet to be manufactured in a cost effective manner with optimizedperformance characteristics. Furthermore, the state of the art EBCCD device has no proven reliability.In this Phase I program, we propose to develop a ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  10. High-Performance Geiger Mode 1.06 micron APD Array

    SBC: VOXTEL, INC.            Topic: N/A

    Conventional InGaAs/InP based APDs have very poor multiplication noise performance. While InGaAs is an excellent infrared absorber, it is a poor signal multiplier. InGaAs/InP APD devices also exhibit poor dark current and afterpulsing characteristics,which result in false signals and makes their utility for Geiger mode detection problematic. In contrast, silicon is an excellent multiplier, but unf ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
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