Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Tool Condition Monitoring and Diagnostics

    SBC: VulcanCraft            Topic: N/A

    A smart machine tool must be able to monitor its condition and report problems. Every CNC machine should provide an alarm for tool condition problems, including tool wear, much as every automobile has a low oil indicator. Tool wear is particularly important for unattended machining as a worn tool can ruin a part. All current tool condition systems operate "blind" without direct information on curr ...

    SBIR Phase I 2003 Department of CommerceNational Institute of Standards and Technology
  2. Model-Based Specification and Testing for Rapid Software Transition

    SBC: COGNITIVE CONCEPTS            Topic: N/A

    The Missile Defense Agency (MDA) faces a problem that's common to all complex military systems and to many commercial applications as well. The time and effort it takes to integrate software functionality into a system and verify correct operation can beoverwhelming and, in some cases, cost prohibitive. Thus, projects seek a process or method to effectively, efficiently and rapidly implement and ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  3. AlN single crystals for photonic applications

    SBC: HEXATECH            Topic: N/A

    The objective of proposed work is to demonstrate that AlN single crystals are suitable for nonlinear optical (NLO) and electro-optic (EO) applications in the visible and UV spectral ranges. AlN is a promising material for photonic applications that requireUV-compatibility, mechanical, chemical and optical robustness, as well as radiation hardness. As a non-centrosymmetric material, AlN has a 2nd o ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  4. Growth of GaN single crystals (BMD002-014A)

    SBC: HEXATECH            Topic: N/A

    Through the proposed research, we plan to demonstrate the feasibility of the ammonothermal growth method for commercial production of high quality GaN crystals. This will be achieved by fabrication of a classical autoclave especially designed for thisprocess, demonstration of adequate solubility, and demonstration of transport and re-deposition of the material on GaN seeds. The ammonothermal cry ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  5. Gallium Nitride Wafer Surface Preparation for Epitaxial Growth

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Kyma Technologies has produced prototype 2

    SBIR Phase II 2003 Department of DefenseMissile Defense Agency
  6. Advanced Gallium Nitride Microelectronic Devices Produced on Gallium Nitride Substrates

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    This program will demonstrate high-performance GaN microelectronic devices for X-band radar applications by using novel device designs and single crystal gallium nitride substrates. FETs for power amplifiers will benefit from lower defects resulting fromgrowth on a native GaN substrate, improved device design, including features such as gate recess and passivation layers, and device cooling. The m ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  7. Manufacturng Process for Production of Doped GaN Crystals

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Kyma Technologies will use its proprietary manufacturing technique for growth of bulk GaN doped substrates. We propose to develop gallium nitride (GaN) substrates with n- and p- type dopants for device fabrication. Attempts to grow low defect densitygallium nitride (GaN) thin films on substrates such as sapphire and silicon carbide (SiC) have had limited success. As such, homoepitaxial GaN thin ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  8. Advanced Manufacturing Process for Growth of Gallium Nitride Crystals

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Gallium nitride crystal growth has gained more attention as the need for a homoepitaxial substrate for GaN devices has increased. Kyma Technologies proposes to develop an advanced manufacturing process capable of growing single crystal GaN at growth ratesin excess of 1mm/hr. 50mm single crystal GaN substrates produced by Kyma Technologies will be used as the seed material to ensure thermal and l ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  9. Gallium Nitride Devices on Semi-insulating Gallium Nitride Substrates for Advanced T/R Modules

    SBC: KYMA TECHNOLOGIES, INC.            Topic: N/A

    Existing T/R modules are based on gallium arsenide (GaAs) transistors and power amplifiers. Current and future XBRs would benefit from improved resolution, enhanced discrimination, and increased power. Significant XBR performance enhancement can beachieved by developing T/R modules that incorporate gallium nitride (GaN) -based power amplifiers. High-performance GaN-based devices, such as HEMTs, h ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
  10. Novel Spacecraft Separation System

    SBC: Tai-Yang Research Company            Topic: N/A

    Tai-Yang Research proposes a novel and revolutionary approach to spacecraft separation. The proposed approach is 100 % contamination free and provides an unlimited number of in-situ rest capability. This revolutionary approach provides a completely uniformand adjustable clamping force. When implemented, the proposed approach will provide a safe, low cost, lightweight, and reliable method of spacec ...

    SBIR Phase I 2003 Department of DefenseMissile Defense Agency
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