Award Data

The Missile Defense Agency (MDA) faces a problem that's common to all complex military systems and to many commercial applications as well. The time and effort it takes to integrate software functionality into a system and verify correct operation can beoverwhelming and, in some cases, cost prohibitive. Thus, projects seek a process or method to effectively, efficiently and rapidly implement and ...

The objective of proposed work is to demonstrate that AlN single crystals are suitable for nonlinear optical (NLO) and electro-optic (EO) applications in the visible and UV spectral ranges. AlN is a promising material for photonic applications that requireUV-compatibility, mechanical, chemical and optical robustness, as well as radiation hardness. As a non-centrosymmetric material, AlN has a 2nd o ...

Through the proposed research, we plan to demonstrate the feasibility of the ammonothermal growth method for commercial production of high quality GaN crystals. This will be achieved by fabrication of a classical autoclave especially designed for thisprocess, demonstration of adequate solubility, and demonstration of transport and re-deposition of the material on GaN seeds. The ammonothermal cry ...

Kyma Technologies has produced prototype 2

This program will demonstrate high-performance GaN microelectronic devices for X-band radar applications by using novel device designs and single crystal gallium nitride substrates. FETs for power amplifiers will benefit from lower defects resulting fromgrowth on a native GaN substrate, improved device design, including features such as gate recess and passivation layers, and device cooling. The m ...

Kyma Technologies will use its proprietary manufacturing technique for growth of bulk GaN doped substrates. We propose to develop gallium nitride (GaN) substrates with n- and p- type dopants for device fabrication. Attempts to grow low defect densitygallium nitride (GaN) thin films on substrates such as sapphire and silicon carbide (SiC) have had limited success. As such, homoepitaxial GaN thin ...

Gallium nitride crystal growth has gained more attention as the need for a homoepitaxial substrate for GaN devices has increased. Kyma Technologies proposes to develop an advanced manufacturing process capable of growing single crystal GaN at growth ratesin excess of 1mm/hr. 50mm single crystal GaN substrates produced by Kyma Technologies will be used as the seed material to ensure thermal and l ...

Existing T/R modules are based on gallium arsenide (GaAs) transistors and power amplifiers. Current and future XBRs would benefit from improved resolution, enhanced discrimination, and increased power. Significant XBR performance enhancement can beachieved by developing T/R modules that incorporate gallium nitride (GaN) -based power amplifiers. High-performance GaN-based devices, such as HEMTs, h ...

Tai-Yang Research proposes a novel and revolutionary approach to spacecraft separation. The proposed approach is 100 % contamination free and provides an unlimited number of in-situ rest capability. This revolutionary approach provides a completely uniformand adjustable clamping force. When implemented, the proposed approach will provide a safe, low cost, lightweight, and reliable method of spacec ...

We propose to optimize the design of a highly versatile active/passive multi-color focal plane array (FPA). The device integrates, within a single pixel, both avalanche photodiode (APD) and two-color LWIR/VLWIR sensing capabilities. The design is based onwell proven HgCdTe heterostructure techniques and manufacturing methods.In Phase I, we will investigate both two-terminal and three-terminal, bac ...