Award Data

We will optimize the design of a monolithic, highly-integrated, active/passive, two-color infrared detector capable of S/MWIR avalanche photodetection, (S)MWIR passive photodetection, or LWIR passive photodetection. The structure is constructed usingback-to-back photodiodes (one designed for unity gain or avalanche operation) manufactured with well-established, band-engineered HgCdTe heterostructu ...

This program will demonstrate high-performance GaN microelectronic devices for X-band radar applications by using novel device designs and single crystal gallium nitride substrates. FETs for power amplifiers will benefit from lower defects resulting fromgrowth on a native GaN substrate, improved device design, including features such as gate recess and passivation layers, and device cooling. The m ...

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Gallium nitride crystal growth has gained more attention as the need for a homoepitaxial substrate for GaN devices has increased. Kyma Technologies proposes to develop an advanced manufacturing process capable of growing single crystal GaN at growth ratesin excess of 1mm/hr. 50mm single crystal GaN substrates produced by Kyma Technologies will be used as the seed material to ensure thermal and l ...

The following proposal is for the Phase II development of a single laser technology capable of generating deep-ultraviolet (0.193 ~m) and middle-infrared (3-5 ~m) wavelengths. This laser will be based on alexandrite pumped, lithium fluoride color-centerlaser technology successfully demonstrated as part of our Phase I effort (contract # DASG60-97-M-1001).This work will involve collaborations with ...

The following proposal is for the Phase II development of a single laser technology capable of generating deep-ultraviolet (0.193 ~m) and middle-infrared (3-5 ~m) wavelengths. This laser will be based on alexandrite pumped, lithium fluoride color-centerlaser technology successfully demonstrated as part of our Phase I effort (contract # DASG60-97-M-1001).This work will involve collaborations with ...

The objective of proposed work is to demonstrate that AlN single crystals are suitable for nonlinear optical (NLO) and electro-optic (EO) applications in the visible and UV spectral ranges. AlN is a promising material for photonic applications that requireUV-compatibility, mechanical, chemical and optical robustness, as well as radiation hardness. As a non-centrosymmetric material, AlN has a 2nd o ...

We will design, develop and deliver a 25x25 pixel indium gallium arsenide (InGaAs) focal plane array (FPA) that satisfies or exceeds all of the technical requirements of this solicitation. The use of a substrate-removed InGaAs photodiode array willexhibit high quantum efficiency from 0.4 ¿m through 1.7 mm. The FPA will thus be usable both for visible imaging and for the imaging of the eye-saf ...

In the phase I SBIR program Structured Materials Industries, Inc. (SMI) successfully demonstrated that an antimonide-based HBT, with speeds in excess of 100 GHz and near zero turn-on voltage should be achievable. This was done by growing an AlInAsSb layerlattice matched to GaSb with an Al content less than 50%--overcoming the miscibility gap. To our knowledge, such growth has not been previously r ...

Radiation tolerant Field Programmable Gate Arrays (FPGA's) have gained wide and rapid acceptance by military and aerospace equipment suppliers; however, there are presently a limited number of chip-sets available for production. The lack of FPGAalternatives severely limits the range of available functions and applications that would greatly benefit from increased performance with radiation hardne ...