Award Data

We will optimize the design of a monolithic, highly-integrated, active/passive, two-color infrared detector capable of S/MWIR avalanche photodetection, (S)MWIR passive photodetection, or LWIR passive photodetection. The structure is constructed usingback-to-back photodiodes (one designed for unity gain or avalanche operation) manufactured with well-established, band-engineered HgCdTe heterostructu ...

This program will demonstrate high-performance GaN microelectronic devices for X-band radar applications by using novel device designs and single crystal gallium nitride substrates. FETs for power amplifiers will benefit from lower defects resulting fromgrowth on a native GaN substrate, improved device design, including features such as gate recess and passivation layers, and device cooling. The m ...

Kyma Technologies, Inc. will demonstrate high-performance gallium nitride (GaN) microelectronic devices for X-band radar applications using single crystal semi-insulating GaN substrates. FETs for power amplifiers will benefit from lower defects resulting from growth on a native GaN substrate. The thermal conductivity of the GaN substrates will be characterized and device structures will be modeled ...

A recently developed nonlinear controller(developed by the PI and the project consultant) called the theta-D method is the centerpiece around which an Integrated Guidance and Control scheme and a nonlinear filter technique are built to enhance the lethality of kinetic kill interceptors and offer means to increase the maneuver ratio advantage. Objectives of this proposal include development of a si ...

Gallium nitride crystal growth has gained more attention as the need for a homoepitaxial substrate for GaN devices has increased. Kyma Technologies proposes to develop an advanced manufacturing process capable of growing single crystal GaN at growth ratesin excess of 1mm/hr. 50mm single crystal GaN substrates produced by Kyma Technologies will be used as the seed material to ensure thermal and l ...

Gallium nitride substrates are now being produced by several manufacturers, however significant market penetration is being limited by high prices and low quantities. This Phase II program is aimed at addressing both of these issues by developing a growth process for the production of 1cm thick boules at a growth rate of 1mm per hour. The Phase I program met and exceeded the goals of demonstrati ...

The objective of proposed work is to demonstrate that AlN single crystals are suitable for nonlinear optical (NLO) and electro-optic (EO) applications in the visible and UV spectral ranges. AlN is a promising material for photonic applications that requireUV-compatibility, mechanical, chemical and optical robustness, as well as radiation hardness. As a non-centrosymmetric material, AlN has a 2nd o ...

High-performance GaN-based devices, such as microwave transistors, laser diodes and light emitting diodes have been demonstrated on sapphire and silicon carbide substrates. Gallium nitride substrates are expected to further improve the performance of these devices due to close lattice and thermal expansion match with GaN-based device structures. The development of a low defect density semi insulat ...

Polarization will increasingly be an important tool in ballistic missile defense. However, in practice, implementing a robust polarimetric system necessitates addressing a number of complex issues and challenges. Furthermore, polarimetric systems,traditionally have relied on spatial or sequential scanning mechanisms to record the multi-dimensional datacube. Due to spatial and/or temporal aliasing, ...

The Phase II STTR will demonstrate the device operation of a GaN Schottky diode power rectifier. Kyma Technologies, Inc. will collaborate with investigators at Auburn University and North Carolina State University for materials growth/characterization and device fabrication/testing. The fabrication of a conventional Schottky diode relies on heteroepitaxy on lattice- and thermal-mismatched foreig ...