The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.
SBC: VOXTEL, INC. Topic: N/A
A back-illuminated planar InGaAs photodiode tested to have 95% quantum effiiency (QE) at 1550 nm, area greater than 1 mm2, low capacitance (<23 pF), and high bandwidth (>125 MHz) will be improved. Although the existing Phase I device exhibited bulk material dark current generation better than commercially available devices, the sidewall-generated dark current was found to dominate the noise ...SBIR Phase II 2010 Department of CommerceNational Institute of Standards and Technology
SBC: Lynguent, Inc. Topic: DTRA092001
State of the art Radiation Hardened by Design (RHBD) techniques must scale down in feature size for radiation effects in 45 nm processes, and also scale up in complexity to support radiation fault analysis of VLSI circuits. Recent access to commercial 45 nm CMOS Silicon-on-Insulator (SOI) technologies has increased the interest in this technology for rad-hard electronic applications due to the in ...SBIR Phase I 2010 Department of DefenseDefense Threat Reduction Agency
SBC: Lynguent, Inc. Topic: DTRA05001
The objective of this research is to develop beta versions of tools for automatically migrating radiation effects predicted in TCAD level tools to compact modeling tools. This transition will enable compact models that possess radiation effects to be quickly generated, which can then be used in circuit design activity. This approach is a substantial improvement over the current ad hoc approaches. ...SBIR Phase II 2006 Department of DefenseDefense Threat Reduction Agency