Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. High Efficiency, Large-Area, 1550 nm InGaAs Photodiodes

    SBC: VOXTEL, INC.            Topic: N/A

    A back-illuminated planar InGaAs photodiode tested to have 95% quantum effiiency (QE) at 1550 nm, area greater than 1 mm2, low capacitance (<23 pF), and high bandwidth (>125 MHz) will be improved. Although the existing Phase I device exhibited bulk material dark current generation better than commercially available devices, the sidewall-generated dark current was found to dominate the noise ...

    SBIR Phase II 2010 Department of CommerceNational Institute of Standards and Technology
  2. Design and Realization of a Dual Function OCM/MPM for Imaging TEMPs

    SBC: Distant Focus Corporation            Topic: N/A

    Regenerative medicine is an emerging, interdisciplinary field that will result in new engineered medical products. The introduction of a high-resolution, non-destructive imaging technique that is capable of penetrating deeply into the highly-scattering scaffold medium has the means to accelerate the development and commercial utilization of these novel materials. Multi-photon microscopy (MPM) is b ...

    SBIR Phase II 2006 Department of CommerceNational Institute of Standards and Technology
  3. Stealth Conformant Coatings for Diver Dry Suits

    SBC: AMERICAN ENERGY TECHNOLOGIES COMPANY            Topic: SOCOM10001

    American Energy Technologies Co., a woman-owned small business concern of Illinois, will partner with Georgia Institute of Technology of Atlanta, GA and Clemson University of South Carolina in order to develop and qualify a matrix of conformant clad coatings for outer garments of rubberized dry suits used by free swimming Special Operations Forces Divers. The principle constituents of these exteri ...

    SBIR Phase I 2010 Department of DefenseSpecial Operations Command
  4. Radiation Fault Analysis for 45 Nanometer CMOS-SOI VLSI Circuits

    SBC: Lynguent, Inc.            Topic: DTRA092001

    State of the art Radiation Hardened by Design (RHBD) techniques must scale down in feature size for radiation effects in 45 nm processes, and also scale up in complexity to support radiation fault analysis of VLSI circuits. Recent access to commercial 45 nm CMOS Silicon-on-Insulator (SOI) technologies has increased the interest in this technology for rad-hard electronic applications due to the in ...

    SBIR Phase I 2010 Department of DefenseDefense Threat Reduction Agency
  5. HIGH EFFICIENCY COMPACT MODELING OF RADIATION EFFECTS

    SBC: Lynguent, Inc.            Topic: DTRA05001

    The objective of this research is to develop beta versions of tools for automatically migrating radiation effects predicted in TCAD level tools to compact modeling tools. This transition will enable compact models that possess radiation effects to be quickly generated, which can then be used in circuit design activity. This approach is a substantial improvement over the current ad hoc approaches. ...

    SBIR Phase II 2006 Department of DefenseDefense Threat Reduction Agency
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