Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until June, 2020.

  1. Dynamic Frequency Passive Millimeter-Wave Radiometer Based on Optical Up-Conversion

    SBC: Phase Sensitive Innovations, Inc.            Topic: 941D

    In the proposed effort, we will leverage this extensive experience and capabilities to realize a frequency agile mmW radiometer that can cover the range of DC-110 GHz and can be scaled to DC-200 GHz under Phase II. Ours is a photonic system that multiplies and up-coverts a low-frequency reference signal onto an optical carrier (laser) using EO modulation, then uses the modulation sidebands to inj ...

    SBIR Phase I 2013 Department of CommerceNational Oceanic and Atmospheric Administration
  2. Covert Optically-Reporting Threat-Functionalized Nanomaterials

    SBC: VOXTEL, INC.            Topic: DTRA122003

    The Defense Threat Reduction Agency (DTRA) and the U.S. Strategic Command Center for Combating Weapons of Mass Destruction (SCC-WMD) requires transformational materials technology to support the intelligence, surveillance, and reconnaissance (ISR) of personnel and materials associated with weapons of mass destruction (WMD) development, manufacturing, and proliferation. Voxtel, Inc. proposes to fa ...

    SBIR Phase I 2013 Department of DefenseDefense Threat Reduction Agency
  3. High Efficiency, Large-Area, 1550 nm InGaAs Photodiodes

    SBC: VOXTEL, INC.            Topic: N/A

    A back-illuminated planar InGaAs photodiode tested to have 95% quantum effiiency (QE) at 1550 nm, area greater than 1 mm2, low capacitance (<23 pF), and high bandwidth (>125 MHz) will be improved. Although the existing Phase I device exhibited bulk material dark current generation better than commercially available devices, the sidewall-generated dark current was found to dominate the noise ...

    SBIR Phase II 2010 Department of CommerceNational Institute of Standards and Technology
  4. Radiation Fault Analysis for 45 Nanometer CMOS-SOI VLSI Circuits

    SBC: Lynguent, Inc.            Topic: DTRA092001

    State of the art Radiation Hardened by Design (RHBD) techniques must scale down in feature size for radiation effects in 45 nm processes, and also scale up in complexity to support radiation fault analysis of VLSI circuits. Recent access to commercial 45 nm CMOS Silicon-on-Insulator (SOI) technologies has increased the interest in this technology for rad-hard electronic applications due to the in ...

    SBIR Phase I 2010 Department of DefenseDefense Threat Reduction Agency
  5. HIGH EFFICIENCY COMPACT MODELING OF RADIATION EFFECTS

    SBC: Lynguent, Inc.            Topic: DTRA05001

    The objective of this research is to develop beta versions of tools for automatically migrating radiation effects predicted in TCAD level tools to compact modeling tools. This transition will enable compact models that possess radiation effects to be quickly generated, which can then be used in circuit design activity. This approach is a substantial improvement over the current ad hoc approaches. ...

    SBIR Phase II 2006 Department of DefenseDefense Threat Reduction Agency
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