You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY20 is not expected to be complete until September, 2021.

  1. Efficient Low-Dark-Count Detector for Photon Counting

    SBC: VOXTEL, INC.            Topic: N/A

    Voxtel has demonstrated efficient high-speed photon counting with thresholded linear-mode avalanche photodiode (APD) receivers using multi-gain-stage InGaAs/InAIAs APDs. In contrast to Geiger APDs, thresholded photon-counting linear APD receivers are thought not to suffer afterpulsing, and can support maximum count rates (MCR) up to 2 or 3 orders of magnitude faster than Geiger APDs. However, the ...

    SBIR Phase II 2009 Department of CommerceNational Institute of Standards and Technology
  2. Dynamic Frequency Passive Millimeter-Wave Radiometer Based on Optical Up-Conversion

    SBC: Phase Sensitive Innovations, Inc.            Topic: 941D

    In the proposed effort, we will leverage this extensive experience and capabilities to realize a frequency agile mmW radiometer that can cover the range of DC-110 GHz and can be scaled to DC-200 GHz under Phase II. Ours is a photonic system that multiplies and up-coverts a low-frequency reference signal onto an optical carrier (laser) using EO modulation, then uses the modulation sidebands to inj ...

    SBIR Phase I 2013 Department of CommerceNational Oceanic and Atmospheric Administration
  3. Dynamic Light Scattering Instrumentation Using Field Programmable Gate Array-based Digital Signal Processing

    SBC: VOXTEL, INC.            Topic: N/A

    An existing low-cost FPGA-based processing platform will be demonstrated with fiber-coupling to single-photon detectors, to perform photon-arrival time stamping with

    SBIR Phase I 2009 Department of CommerceNational Institute of Standards and Technology
  4. High Efficiency, Large-area, 1550 nm InGaAs Photodiodes

    SBC: VOXTEL, INC.            Topic: N/A

    A stable, well characterized InGaAs materials growth and photodetector fabrication process will be used to fabricate matched photodiodes optimized for balanced homodyne detection. The 1-mm-diameter p-i-n photodetectors will be manufactured back-illuminated with a 5-micron absorber, allowing residual light to reflect off the front-side metal to make a double pass through the active layer. Ultra-hig ...

    SBIR Phase I 2009 Department of CommerceNational Institute of Standards and Technology
US Flag An Official Website of the United States Government