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The Award database is continually updated throughout the year. As a result, data for the given year is not complete until April of the following year. Annual Reports data is a snapshot of agency reported information for that year and hence might look different from the live data in the Awards Information charts.

  1. High Current CW Superconducting RFQ Linac

    SBC: Accsys Technology, Inc.            Topic: N/A

    THE EFFECTIVENESS OF THE NEUTRAL PARTICLE BEAM (NPB) MISSILE DEFENSE SYSTEM DEPENDS ON THE SUCCESSFUL ACCELERATION OF HIGH BRIGHTNESS H ION BEAMS AT HIGH CURRENTS WITH CONTINOUS WAVE (CW) OPERATION. PRESENT BASELINE DESIGNS FOR THESE POWERFUL LINAC SYSTEMS INCLUDE ONE OR MORE STAGES OF BEAM COMBINATION (FUNNELING) INTO LATER STAGES OF THE LINAC TO OVERCOME THE CURRENT LIMITATIONS OF THE INITIAL LI ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  2. BIMETALLIC PRECURSORS FOR CHEMICAL VAPOR DEPOSITION

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE NEXT GENERATION OF HIGH POWER, HIGH FREQUENCY ELECTRONIC DEVICE TECHNOLOGY WILL BE BASED ON WIDE BANDGAP SEMICONDUCTOR MATERIALS SUCH AS SIC, GAN AND DIAMOND. OF THESE, SILICON CARBIDE IS THE MOST PROMISING MATERIAL FOR NEAR TERM APPLICATIONS, SINCE ITS PROCESSING SHARES MANY COMMON FEATURES WITH WELL-ESTABLISHED SILICON PROCESSING. TECHNOLOGY HAS BEEN DEMONSTRATED FOR PRODUCING OHMIC AND SCHO ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  3. HIGH CONDUCTIVITY SILICON CARBIDE SUBSTRATES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    HIGH POWER AND HIGH TEMPERATURE ELECTRONIC DEVICES ARE IMPORTANT IN BOTH DEFENSE AND COMMERCIAL SYSTEMS. BETA SILICON CARBIDE IS AN EXCELLENT CANDIDATE SEMICONDUCTOR MATERIAL FOR DEMANDING APPLICATIONS DUE TO ITS HIGH BREAKDOWN VOLTAGE, RELATIVELY LARGE BAND GAP, HIGH THERMAL CONDUCTIVITY AND HIGH MELTING POINT. USE OF SILICON CARBIDE THIN FILMS IS HAMPERED, HOWEVER, BY THE INABILITY TO REPRODUCIB ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  4. Negative Electron Affinity Diamond Vacuum Collector Transistor

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    SEMICONDUCTING DIAMOND HAS MANY NOVEL PROPERTIES, MOST NOTABLY A STABLE NEGATIVE ELECTRON AFFINITY SURFACE. CONDUCTION BAND ELECTRONS ARE READILY EMITTED FROM A NEGATIVE ELECTRON AFFINITY (NEA) MATERIAL BECAUSE THE BULK CONDUCTION BAND LIES ABOVE THE VACUUM LEVEL. IN THE PHASE I PROGRAM WE WILL CONSTRUCT A NEGATIVE ELECTRON AFFINITY DIAMOND VACUUM COLLECTOR TRANSISTOR AND INVESTIGATE THE PERFORMAN ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  5. Low Valent Titanium Source Reagents for MOCVD of Titanium Nitride

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    TITANIUM NITRIDE (TiN) IS RAPIDLY BECOMING AN IMPORTANT MATERIAL AS A BARRIER LAYER IN VLSI DRAMs, AS AN ANTIREFLECTION COATING AND AS A "GLUE" LAYER BETWEEN NOBLE METALS AND SILICON DIOXIDE IN BOTH MEMORY AND LOGIC DEVICES. TYPICALLY, THIN FILMS OF TiN ARE DEPOSITED BY PHYSICAL VAPOR DEPOSITION METHODS, BUT AS DEVICE FEATURE SIZES SHRINK TO ULSI DIMENSIONS, CHEMICAL VAPOR DEPOSITION (CVD) WILL BE ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  6. Doped Silicide OHMIC Contacts To Silicon Carbide

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  7. DIAMOND COLD CATHODES FOR FLAT PANEL DISPLAYS

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    N/A

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  8. Ferroelectric Capacitors for Pulse Power Electronics

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  9. Totally Monolithic GaAs/HgCdTe Focal Plane Arrays

    SBC: ADVANCED DEVICE TECHNOLOGY, INC.            Topic: N/A

    WE PROPOSE TO DEVELOP A TOTALLY INTEGRATED MONOLITHIC GaAs/HgCdTe FPAs ON GaAs SUBSTRATED. THE INNOVATIVE FEATURES ARE: 1. THE DETECTOR IS FABRICATED DIRECTLY ON THE GaAs MULTIPLEXER SUBSTRATE, WITH THE MONOLITHIC METAL INTERCONNECT INSTEAD OF STANDARD INDIUM BUMPS ALLOWING ARRAY SIZES UP TO 1024x1024 WITH HIGH FRAME RATES. 2. THE FOCAL PLANES WILL INCORPORATE AN ON-CHIP LOW POWER MASSIVELY PARALL ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  10. Miniaturized FT-IR Sensor for Infrared Measurements

    SBC: Advanced Fuel Research, Inc.            Topic: N/A

    2Phase II will develop an advanced dynamically-balanced "isolation interferometer" whose mirror motion is decoupled from external vibrations. Such an interferometer can be employed to make an FT-IR instrument which is immune to vibration and is permanently aligned. Advanced Fuel Research,Inc./On-line Technologies, Inc. will test both the plane mirror and corner cube designs, choose the best one an ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency

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