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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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Negative Electron Affinity Diamond Vacuum Collector Transistor
SBC: Advanced Technologies/Laboratories Intl Topic: N/ASEMICONDUCTING DIAMOND HAS MANY NOVEL PROPERTIES, MOST NOTABLY A STABLE NEGATIVE ELECTRON AFFINITY SURFACE. CONDUCTION BAND ELECTRONS ARE READILY EMITTED FROM A NEGATIVE ELECTRON AFFINITY (NEA) MATERIAL BECAUSE THE BULK CONDUCTION BAND LIES ABOVE THE VACUUM LEVEL. IN THE PHASE I PROGRAM WE WILL CONSTRUCT A NEGATIVE ELECTRON AFFINITY DIAMOND VACUUM COLLECTOR TRANSISTOR AND INVESTIGATE THE PERFORMAN ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Low Valent Titanium Source Reagents for MOCVD of Titanium Nitride
SBC: Advanced Technologies/Laboratories Intl Topic: N/ATITANIUM NITRIDE (TiN) IS RAPIDLY BECOMING AN IMPORTANT MATERIAL AS A BARRIER LAYER IN VLSI DRAMs, AS AN ANTIREFLECTION COATING AND AS A "GLUE" LAYER BETWEEN NOBLE METALS AND SILICON DIOXIDE IN BOTH MEMORY AND LOGIC DEVICES. TYPICALLY, THIN FILMS OF TiN ARE DEPOSITED BY PHYSICAL VAPOR DEPOSITION METHODS, BUT AS DEVICE FEATURE SIZES SHRINK TO ULSI DIMENSIONS, CHEMICAL VAPOR DEPOSITION (CVD) WILL BE ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Doped Silicide OHMIC Contacts To Silicon Carbide
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Ferroelectric Capacitors for Pulse Power Electronics
SBC: Advanced Technologies/Laboratories Intl Topic: N/AN/A
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
High Specific Power, Electrostatically Bonded, Ultra-thin Gaas
SBC: ASTROPOWER, INC. Topic: N/AASTROPOWER PROPOSES TO DEVELOP A LIGHTWEIGHT, HIGH PERFORMANCE, ULTRA-THIN ELECTROSTATICALLY BONDED GaAs SOLAR CELL WITH COPLANAR BACK CONTACTS. THE INNOVATIVE DESIGN INCORPORATES LIGHT TRAPPING, ADHESIVELESS COVER SLIDE BONDING, AND ELIMINATES GRID SHADING. THIS NOVEL DEVICE WILL EXHIBIT INCREASED EFFICIENCY AND SPECIFIC POWER DUE TO THE HIGHER OPEN CIRCUIT VOLTAGE AND SHORT CIRCUIT CURRENT OBTAI ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Monolithically Interconnected, Thin Silicon Solar Cell Array
SBC: ASTROPOWER, INC. Topic: N/AN/A
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Bipolar Lead Acid Batteries Using Polymer/carbon Composite Bipolar
SBC: BIPOLAR TECHNOLOGIES Topic: N/AWORKERS AT BRIGHAM YOUNG UNIVERSITY, BIPOLAR TECHNOLOGIES, HAVE DEVELOPED A MATERIAL FOR USE AS A BIPOLAR ELECTRODE SUPPORT WHICH WILL RESULT IN MORE LIGHTWEIGHT, LONGER LIFE BATTERIES. THE ELECTRODE SUPPORT IS A COMPOSITE MATERIAL COMPOSED OF LOW SURFACE AREA CARBON/POLYMER COMPOSITE MATERIAL WHICH HAS LOW ELECTRICAL RESISTANCE, CHEMICALLY STABLE, AND HAS LOW ACTIVITY FOR OXYGEN EVOLUTION, AN UND ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Low Temperature Microwave Plasma-assisted Jet Vapor Deposition
SBC: JET PROCESS CORP Topic: N/AJET VAPOR DEPOSITION (JVD) INCORPORATING MICROWAVE SOURCES AND PLASMA TREATMENT OF THE SUBSTRATE IS A PROMISING METHOD FOR DEPOSITING SILICON NITRIDE AND SILICON DIOXIDE. THE TECHNIQUE OFFERS CONTROLLABLE RATES OF DEPOSITION, LOW DEPOSITION TEMPERATURE AND HIGH POTENTIAL THROUGHPUT. THE PATENTED JVD PROCESS ALSO GENERATES A MINIMAL QUANTITY OF TOXIC WASTE PRODUCTS, IN CONTRAST TO MANY CVD PROCESSE ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
"Segmented" Solid Host Dye Lasers
SBC: JET PROCESS CORP Topic: N/ATO DATE, CANDIDATE HOST MATERIALS, SUCH AS PLASTICS AND SOL-GEL GLASSES, AS WELL AS METHODS OF HOST FABRICATION EMPLOYING THEM, HAVE NOT PTOVEN OPTIMAL. THEY REQUIRE CONVERSION OF A DYE-DOPED LIQUID PRECURSOR TO THE FINAL SOLID HOST; WE PROPOSE AN ALTERNATIVE FABRICATION APPROACH BASED ON VAPOR DEPOSITION AND EXPLORATION OF OTHER MATERIALS. HIGH QUALITY THIN GLASS PLATE OR OPTICAL FIBER "SEGMENTS" ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency -
Far Infrared Qw Detector
SBC: Materials Technologies Corporation Topic: N/ASURVEILLANCE IN THE INFRA-RED PART OF THE ELECTROMAGNETIC SPECTRUM DEMANDS INNOVATIVE CONCEPTS TO DESIGN QUANTUM WELL (QW) DETECTORS FOR WAVELENGTH BEYOND 12 UM. THE REQUIREMENT FOR LOW TUNNELING CURRENT AND SUPERIOR TRANSPORT PROPERTIES MAKE InAs-In(x)Ga(1-x)Sb, A TYPE II SUPERLATTICE, A SUITABLE CANDIDATE FOR INFRA-RED APPLICATION. STRAIN INDUCED BAND GAP VARIATION AND WAVELENGTH CONTROLLABILITY ...
SBIR Phase I 1993 Department of DefenseMissile Defense Agency