List

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. SOLID STATE LASER SCANNER FOR LASER ORDNANCE INITIATOR

    SBC: Apa Optics, Inc.            Topic: N/A

    THIS PROPOSAL ADDRESSES THE DEVELOPMENT OF A SOLID STATE LASER SCANNER FOR ROUTING A HIGH ENERGY LASER BEAM AMONG THE FIBER OPTIC ENERGY TRANSFER PATHS OF A LASER ORDNANCE INITIATION SYSTEM. A SOLID STATE LASER SCANNER WITH NO MOVING PARTS WILL ENABLE A MORE COMPACT AND DURABLE LASER ORDNANCE INITIATION SYSTEM. APA OPTICS' SOLID STATE LASER SCANNER UTILIZES INTERGRATED OPTIC WAVEGUIDES OF ALGAAS A ...

    SBIR Phase II 1992 Department of DefenseAir Force
  2. METALORGANIC ATOMIC LAYER EPITAXY FOR YBACUO SIS DETECTOR FABRICATION

    SBC: Apa Optics, Inc.            Topic: N/A

    THIS PROPOSAL DESCRIBES A PHASE I PROGRAM AIMED AT DEVELOPING SUPERCONDUCTOR INSULATOR SUPERCONDUCTOR (SIS) DETECTORS IN THIN FILMS OF YBACUO DEPOSITED ON SRTIO3 SUBSTRATES. WHEN OPERATEDIN THE QUANTUM MODE, OUR PROPOSED HTC BASED SIS DETECTOR CAN POTENTIALLY HAVE A VERY HIGH SENSITIVITY FOR LWIR DETECTION. WE PLAN TO USE AUNIQUE MOCVD BASED ATOMIC LAYER EPITAXY APPROACH. OUR SELECTION OF ATOMIC L ...

    SBIR Phase II 1992 Department of DefenseDefense Advanced Research Projects Agency
  3. VERTICAL CAVITY SURFACE EMITTING LASER MODULES FOR OPTICAL COMMUNICATION AND SIGNAL PROCESSING

    SBC: Apa Optics, Inc.            Topic: N/A

    VERTICAL CAVITY SURFACE EMITTING LASERS ARE UNDER DEVELOPMENT AT SEVERAL U.S. LABS WHICH CONSIST OF A GAAS/ALGAAS QUANTUM WELL FABRY-PEROT CAVITY SANDWICHED BETWEEN N AND P DOPED HIGH REFLECTIVITY SEMICONDUCTOR MIRRORS (GAAS/ALGAAS QUARTER WAVE STACKS). OUR PHASE I RESEARCH PROVES THE FEASIBLITY OF UNIQUE APPROACH TO THE ELECTRIC ADDRESSABILITY OF THESE SURFACE EMITTING LASERS. FOR ADDRESSING A (M ...

    SBIR Phase II 1992 Department of DefenseMissile Defense Agency
  4. A BURIED ELECTRODE MACH ZEHNDER WAVEGUIDE INTENSITY MODULATOR WITH OPERATION SPEEDS IN EXCESS OF 100 GHZ

    SBC: Apa Optics, Inc.            Topic: N/A

    THIS PROPOSAL DESCRIBES AN APA OPTICS PROGRAM TO DEVELOP A HIGH SPEED (100GHZ) GAAS WAVEGUIDE BASED MACH ZEHNDER MODULATOR. OUR APPROACH CENTERS ON THE USE OF A BURIED ELECTRODE CONFIGURATION TO ACHIEVE VELOCITY MATCHING OF THE RF AND OPTICAL SIGNALS. THIS WE FEEL WILL RESULT IN A DEVICE WITH A BROADBAND RESPONSE FROM DC TO 100GHZ. WE WILL WORK IN CONJUNCTION WITH THE ULTRFAST SCIENCE LAB AT THE U ...

    SBIR Phase I 1992 Department of DefenseArmy
  5. AlxGa(1-x)N High Electron Mobility Transistors for High Temperature Applications

    SBC: Apa Optics, Inc.            Topic: N/A

    GaN high electron mobility transistors or HEMTs are proposed for use as high temperature electronic devices. HEMTs are excellent for both power and low noise amplification since they posses a high carrier concentration and an enhanced carrier mobility. GaN has a large bandgap of 3.2 a, which gives it a greater breakdown voltage and a higher saturated electron velocity than GaAs. GaN, in addition, ...

    SBIR Phase I 1992 Department of DefenseNavy
  6. ATOMIC LAYER EPITAXY OF BORON NITRIDE

    SBC: Apa Optics, Inc.            Topic: N/A

    WE PROPOSE A PHASE I RESEARCH PROGRAM AIMED AT DEPOSITING SINGLE CRYSTAL BN FILMS OVER SAPPHIRE AND SILICON CARBIDE SUBSTRATES. OUR PLAN IS TO EMPLOY A UNIQUE PHOTO-ASSISTED SWITCHED ATOMIC LAYER EPITAXY PROCESS. THIS WE FEEL WILL REDUCE THE SINGLE CRYSTAL EPITAXY TEMPERATURE VALUES CLOSE TO 1400C. WE ALSO PROPOSE TO USE A UNIQUE MULTILAYER BUFFERING PROCEDURE TO DECREASE THE INTERFACE DEFECTS RES ...

    SBIR Phase I 1992 Department of DefenseAir Force
  7. GaAs/GaN Strained Layer Superlattice Material for High Temperature Transistors

    SBC: Apa Optics, Inc.            Topic: N/A

    Electronic devices which operate at high temperatures could be used in many military and commercial systems. GaAs and Si based devices cannot operate at these temperatures and require cooling. Wide bandgap material such as diamond, SiC and GaN have greater breakdown voltages, higher operating temperatures, and higher saturated electron velocities than either GaAs or Si. However, these material sys ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  8. Novel Doping Sources for III-V Molecular Beam Epitaxy

    SBC: Essential Research, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseAir Force
  9. HIGH SPEED HIGH RESOLUTION CORRELATOR

    SBC: Knightronix, Inc.            Topic: N/A

    THERE IS A NEED FOR A HIGH SPEED, HIGH RESOLUTION CORRELATION SYSTEM FOR TARGET TRACKING, WHICH IS COST EFFECTIVE, AND FIELDABLE FOR USE ON THE FORWARD AREA AIR DEFENSE (FAAD) SYSTEM. SUCH A TRACKER SHALL BE CAPABLE OF OPERATING AT HIGHER THAN NORMAL TV RATES, TO PROVIDE THE NECESSARY DYNAMIC TRACKING ACCURACY AND ACCOMODATE TARGET SIZE AND ROTATIONAL CHANGES. THE PROGRAM EFFORT IS TO DEVELOP A CU ...

    SBIR Phase II 1992 Department of DefenseArmy
  10. DEVELOPMENT OF MEMBRANE SAMPLING SYSTEM TO CONCENTRATE TOXIC ENVIRONMENTAL COMPOUNDS FOR RAMAN SPECTROSCOPY ANALYSIS

    SBC: NeoMecs Inc.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseAir Force

Agency Micro-sites

SBA logo
Department of Agriculture logo
Department of Commerce logo
Department of Defense logo
Department of Education logo
Department of Energy logo
Department of Health and Human Services logo
Department of Homeland Security logo
Department of Transportation logo
Environmental Protection Agency logo
National Aeronautics and Space Administration logo
National Science Foundation logo
US Flag An Official Website of the United States Government