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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Al(In)GaN/(In)GaN High Electron Mobility Transistors for Low-Noise and High-Power Applications

    SBC: SVT ASSOCIATES, INCORPORATED            Topic: N/A

    AlInGaN-based heterostructures have demonstrated unmatched versatility in optical and electronic applications. In particular, AlGaN/GaN high electron mobility transistors (HEMTs) are the leading candidates for realizing ultra-high frequency, low-noiseand high-power amplifiers. The addition of indium to the composition of these HEMTs is expected to dramatically improve their performance. We prop ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency
  2. High Speed VCSEL for 1300 nm Optical Network

    SBC: SVT ASSOCIATES, INCORPORATED            Topic: N/A

    Fiber optical transmission is increasingly applied to computer network, secure telecommunication systems, military aircraft, and even in missile guidance systems. 1300 nm vertical cavity surface-emitting lasers (VCSEL) are becoming a prefered technologyfor transceivers in short- and medium-haul, enterprise and metro data network. There is significant interest in using diluted nitride GaInNAs as ac ...

    STTR Phase I 2001 Department of DefenseMissile Defense Agency

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