You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Improved Sensitivity for Environmental Monitors through Innovative Application of Wavelets

    SBC: ADA TECHNOLOGIES, INC.            Topic: N/A

    N/A

    SBIR Phase I 1995 Department of Energy
  2. Automated Design Tool Set for Reliability and Performance Evaluation of Fault-Tolerant Avionics Systems

    SBC: ADVANCED SYSTEMS & TECHNOLOGIES INC            Topic: N/A

    Reliability and performance are critical characteristics of the Army's avionics systems. These systems must meet stringent requirements in the areas of: (1) dispatchability, or operational readiness to support missions; (2) dependability, or the ability to perform critical functions correctly during the duration of the mission; and (3) responsiveness, or the ability to deliver computing services a ...

    SBIR Phase II 1995 Department of DefenseArmy
  3. Field-Portable Reflective Spectrometer

    SBC: Analytical Spectral Devices,            Topic: N/A

    In this study, a design will be developed for a field-portable spectroradiometer covering the 1.0-2.5 um wavelength region utilizing line array detectors. This insturment will be used for the mreasurement of the reflectances of both man-made and natural materials using ambient solar illumination. The preliminary functional requirements for this spectrometer are as follows: wavelength range from 1. ...

    SBIR Phase II 1995 Department of DefenseArmy
  4. Noninvasive Sensor for Measuring the Partial Pressure of Oxygen in Humans

    SBC: ANHOLT TECHNOLOGIES, INC.            Topic: N/A

    The air of this proposal is to develop a noninvasive probe that may be placed near, but not on, the patient or the patient's wound, to measure the partial pressure of dissolved oxygen in the interstitial body fluids. The sensor is capable of assessing gas pressure levels in a graduated fashion from superficial to deep, in both healthy and compromised tissues. The sensitivity is sufficient to mon ...

    SBIR Phase I 1995 Department of DefenseAir Force
  5. Multicolor UV Seeker Based on GaN/GaAs Heterostructures

    SBC: Apa Optics, Inc.            Topic: N/A

    APA Optics will develop a monolithic UV seeker for use in flame sensing and passive or tactical threat warning systems. The key to the technical approach is the deposition of high optical/electrical quality Al(x)Ga(1-x)N over GaAs substrates and using it to fabricate back to back Schottky barrier detectors. Al(x)Ga(1-x)N is a compound III/V semiconductor system with a bandgap tunable from 220 to 3 ...

    SBIR Phase II 1995 Department of DefenseMissile Defense Agency
  6. Growth of Bulk Single Crystal A1N Substrates for A1GaN Epitaxy

    SBC: Apa Optics, Inc.            Topic: N/A

    We propose a six month Phase I program to demonstrate the feasibility of growing A1N single crystals to serve as substrates for subsequent A1xGa1xN epitaxy. Our approach is to use a low pressure, high temperature (>>2000oC) furnace with a temperature gradient between the A1N charge and the deposition (seed) regions. Our approach is based on several innovations. These include the use of single prec ...

    SBIR Phase II 1995 Department of DefenseDefense Advanced Research Projects Agency
  7. GaN/AlN Based High Voltage Heterostructure Transistor

    SBC: Apa Optics, Inc.            Topic: N/A

    High voltage semiconductor devices have found important applications in the areas of high power generation, power control, power conversion, surge protection, and industrial electronics. However, GaAs or Si based high voltage device are limited by a relatively low intrinsic breakdown voltage and,therefore, inherently suited for high power applications. We propose to develop novel high voltage hete ...

    SBIR Phase I 1995 Department of DefenseMissile Defense Agency
  8. Development of Compliant Substrates for GaN Epitaxy

    SBC: Apa Optics, Inc.            Topic: N/A

    We propose a six month Phase I research program aimed at developing compliant substrates for the epitaxy of GaN and AlGaN films. We present two alternate approaches one with silicon and the other with GaAs as the starting substrate material and a unique multilayer structure to be deposited using low pressure MOCVD. We propose to investigate an approach based on the use of SIMOX substrates. These c ...

    SBIR Phase I 1995 Department of DefenseNavy
  9. A GaN-A1GaN CCD for UV Imaging Applications

    SBC: Apa Optics, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1995 Department of DefenseAir Force
  10. PC-Based Disk Array Subsystem For Real-Time Recording

    SBC: Applied Technologies, Inc.            Topic: N/A

    The standard technique for the recording of telemetry data in range operations has been instrumentation tape recording. This has provided the capability for recording data at high data rates for extended periods of time. While convenient for recording, this technique suffers drawbacks in processing and playback of the data. Due to the serial nature of the medium, no capability exists for near-re ...

    SBIR Phase I 1995 Department of DefenseNavy
US Flag An Official Website of the United States Government