You are here

Award Data

For best search results, use the search terms first and then apply the filters
Reset

The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. INTERACTIVE DNA SEQUENCE PROCESSING FOR A MICROCOMPUTER

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    DNA AND BIOSEQUENCES ARE BEING DETERMINED FASTER THAN THEY CAN BE COMPARED AND ANALYZED. PRESENT TECHNIQUES FOR RIGOROUSLY SEARCHING A LARGE DATABASE ARE COSTLY AND TIME CONSUMING. UNDER ALL PLAUSIBLE GROWTH PROJECTIONS, THE PROBLEM WILL SOON BECOME OVERWHELMING. A CUSTOM, VERY LARGE SCALE INTEGRATED CIRCUIT THAT COULD BE USED FOR HIGH SPEED COMPARISON, ANALYSIS, AND INTERPRETATION OF DNA AND PROT ...

    SBIR Phase I 1992 Department of Energy
  2. A BURIED ELECTRODE MACH ZEHNDER WAVEGUIDE INTENSITY MODULATOR WITH OPERATION SPEEDS IN EXCESS OF 100 GHZ

    SBC: Apa Optics, Inc.            Topic: N/A

    THIS PROPOSAL DESCRIBES AN APA OPTICS PROGRAM TO DEVELOP A HIGH SPEED (100GHZ) GAAS WAVEGUIDE BASED MACH ZEHNDER MODULATOR. OUR APPROACH CENTERS ON THE USE OF A BURIED ELECTRODE CONFIGURATION TO ACHIEVE VELOCITY MATCHING OF THE RF AND OPTICAL SIGNALS. THIS WE FEEL WILL RESULT IN A DEVICE WITH A BROADBAND RESPONSE FROM DC TO 100GHZ. WE WILL WORK IN CONJUNCTION WITH THE ULTRFAST SCIENCE LAB AT THE U ...

    SBIR Phase I 1992 Department of DefenseArmy
  3. AlxGa(1-x)N High Electron Mobility Transistors for High Temperature Applications

    SBC: Apa Optics, Inc.            Topic: N/A

    GaN high electron mobility transistors or HEMTs are proposed for use as high temperature electronic devices. HEMTs are excellent for both power and low noise amplification since they posses a high carrier concentration and an enhanced carrier mobility. GaN has a large bandgap of 3.2 a, which gives it a greater breakdown voltage and a higher saturated electron velocity than GaAs. GaN, in addition, ...

    SBIR Phase I 1992 Department of DefenseNavy
  4. ATOMIC LAYER EPITAXY OF BORON NITRIDE

    SBC: Apa Optics, Inc.            Topic: N/A

    WE PROPOSE A PHASE I RESEARCH PROGRAM AIMED AT DEPOSITING SINGLE CRYSTAL BN FILMS OVER SAPPHIRE AND SILICON CARBIDE SUBSTRATES. OUR PLAN IS TO EMPLOY A UNIQUE PHOTO-ASSISTED SWITCHED ATOMIC LAYER EPITAXY PROCESS. THIS WE FEEL WILL REDUCE THE SINGLE CRYSTAL EPITAXY TEMPERATURE VALUES CLOSE TO 1400C. WE ALSO PROPOSE TO USE A UNIQUE MULTILAYER BUFFERING PROCEDURE TO DECREASE THE INTERFACE DEFECTS RES ...

    SBIR Phase I 1992 Department of DefenseAir Force
  5. GaAs/GaN Strained Layer Superlattice Material for High Temperature Transistors

    SBC: Apa Optics, Inc.            Topic: N/A

    Electronic devices which operate at high temperatures could be used in many military and commercial systems. GaAs and Si based devices cannot operate at these temperatures and require cooling. Wide bandgap material such as diamond, SiC and GaN have greater breakdown voltages, higher operating temperatures, and higher saturated electron velocities than either GaAs or Si. However, these material sys ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  6. DEMONSTRABLY CORRECT COMPILATION (DCC)

    SBC: Baldwin/mchugh Assoc., Inc.            Topic: N/A

    A TECHNIQUE FOR OBTAINING TRUSTWORTHY COMPILATION BASED ON A COMPILATION CHECKER (SIMILAR TO A PROOF CHECKER) IS PROPOSED. THE TRANSFORMATIONS USED IN A COMPILER WILL BE FORMALLY SPECIFIED AND VERIFIED USING INTERPRETER EQUIVALENCE METHODS. THE COMPILER WILL BE INSTRUMENTED TO PRODUCE A TRACE OF THE TRANSFORMATIONS APPLIED IN THE COMPILATION OF A GIVEN PROGRAM. THE COMPILATION CHECKER WILL VALIDAT ...

    SBIR Phase I 1992 Department of DefenseDefense Advanced Research Projects Agency
  7. NEW GADOLINIUM-BORON COMPOUNDS FOR NEUTRON CAPTURE THERAPY

    SBC: BORON BIOLOGICALS, INC.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of Energy
  8. Development of 6H-SIC CMOS Transistors for Insertion into a 3500C Operational Amplifier

    SBC: CREE RESEARCH, INC.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseNavy
  9. Evaluation of High Power 6H-SiC Microwave Field-Effect Transistors for High Temperature Operation

    SBC: CREE RESEARCH, INC.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseAir Force
  10. Planar Holographic Optical Interconnects for Multichip Modules

    SBC: DIGITAL OPTICS CORP.            Topic: N/A

    PLEX Corporation will demonstrate a highly efficient laser emitting light at 1100nm in the near infrared. Technical issues in laser design will be resolved in Phase I, with a full lasing test experiment in Phase 2. This laser candidate has potentially a 25% electrical efficiency and can, in principle, be scaled to high power levels. Cutting and welding applications are foreseen in the industrial e ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
US Flag An Official Website of the United States Government