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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. AN ADVANCED ELECTROCHEMICAL SENSOR FOR THE SIMULTANEOUS ANALYTICAL MEASUREMENT OF THREE CHEMICAL SPECIES

    SBC: ALDERON BIOSCIENCES, INC.            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of Energy
  2. Optoelectronic Integrated Circuits Based on Single Crystal GaN Waveguides

    SBC: Apa Optics, Inc.            Topic: N/A

    We propose the exploration of single crystal GaN waveguides for the fabrication of optoelectronic integrated circuits. The feasibility of using GaN for short wavelength (up to 365 nm) OEIC's will be established in Phase I via the demonstration of a channel waveguide based phase shifter. The Al(sub x)GA(sub 1-x)N material system with its transparency from 365 nm to 12 microns, tunable refractive in ...

    SBIR Phase II 1994 Department of DefenseAir Force
  3. WAVELENGTH DIVISION MULTIPLEXED OPTICAL MODULATOR FOR ADVANCED COMMUNICATION SYS

    SBC: Apa Optics, Inc.            Topic: N/A

    We propose to demonstrate the design, fabrication, and performance of an integrated optic based device which provides for both multiplexing and independent external modulation of three closely spaced wavelengths emitted by a multi-longitudinal mode laser. The innovative aspect of the proposed device is the use of an integrated optics device chip to enable coupling of the dispersed laser wavelength ...

    SBIR Phase II 1994 Department of DefenseNavy
  4. Growth of Bulk Single Crystal AlN Substrates for AlxGa1-xn Epitaxy

    SBC: Apa Optics, Inc.            Topic: N/A

    We propose a six month Phase I program to demonstrate the feasibility of growing A1N single crystals to serve as substrates for subsequent A1xGa1-xN epitaxy. Our approach is to use a low pressure, high temperature (2000 C) furnace with a temperature gradient between the A1N charge and the deposition (seed) regions. Our approach is based on several innovations. These include the use of single precu ...

    SBIR Phase I 1994 Department of DefenseDefense Advanced Research Projects Agency
  5. Growth of Bulk Single Crystal A1N Substrates for A1GaN Epitaxy

    SBC: Apa Optics, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseDefense Advanced Research Projects Agency
  6. Multicolor UV Seeker Based on GaN/GaAs Heterostructures

    SBC: Apa Optics, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1994 Department of DefenseMissile Defense Agency
  7. Commercialization of a Large-Signal Non-quasi-static Bipolar Transistor Model

    SBC: APPLIED RESOURCES CORPORATION            Topic: N/A

    Millimeter-wave circuit design requires accurate models to optimize performance, to minimize the number of preliminary designs, and to allow design centering for uniformity and high yield reducing cost and improving reliability. Existing bipolar circuit models fail at prediction of high frequency, non-linear, and switching behaviors. These models are not specified by the physical structure of the ...

    SBIR Phase I 1994 Department of DefenseDefense Advanced Research Projects Agency
  8. Nitrogen Source for Molecular Beam Epitaxy by Photofragmentation of Ammonia

    SBC: Applied Semiconductor            Topic: N/A

    Epitaxial growth of the aluminum gallium nitride (AlGaN) material system by molecular beam epitaxy (MBE) has been hindered by the lack of a suitable nitrogen source. The deposition of AlGaN at typical MBE growth temperatures results in nitrogen deficient films that suffer from low growth rates and high n-type background carrier concentrations. This problem has recently been addressed in MBE by inc ...

    SBIR Phase I 1994 Department of DefenseAir Force
  9. PHOTOAFFINITY IMMOBILIZATION OF FUSION PROTEINS ON BIOSENSOR SURFACES

    SBC: SURMODICS, INC.            Topic: N/A

    THIS PROJECT IS DESIGNED TO RESOLVE A CRITICAL AND ENDURING OBSTACLE TO THE DEVELOPMENT OF DEPENDABLE BIOSENOR SYSTEMS FOR THE TIMELY DETECTION OF TOXIC AND INFECTIOUS AGENTS. A PASSIVATED SENSOR SURFACE WILL BE DEVELOPED THAT WILL ASSOCIATE UNIQUELY WITH THE SPECIFIC BINDING PROTEIN IN ITS CRUDE SOURCE SOLUTION AND, UPON ACTIVATION BY LIGHT, COVALENTLY BOND THIS PROTEIN FUNCTIONALLY ORIENTED IN ...

    SBIR Phase I 1994 Department of Energy
  10. Low-Cost Chemically Bonded Ceramic Prototype Tooling for Fabrication of Composites

    SBC: Cercon, Inc.            Topic: N/A

    The proposed investigation will characterize the physical properties of Chemically Bonded Ceramic (CBC) tooling currently being evaluated as production tooling by the automotive and furniture industries for fabricating plastics and molded organic foams. This information will be used to modify the tooling mix compositions to optimize the properties required to successfully form graphite reinforced ...

    SBIR Phase I 1994 Department of DefenseNavy
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