Award Data

The goal of this research project is to determine the viability of an interconnect and probing technology which could be used to test and burn-in unpackaged semiconductors at system level speed, and at operating frequency, with voltage and with temperature margins verified. The focus of the research will be to address directly the most costly limitation to widespread MCM use; the problem of readil ...

THIS PROJECT WILL PREPARE FOR EVALUATION A MATERIAL WHICH SHOULD DEMONSTRATE SUPERIOR PERFORMANCE IN ABSORBING AND DISSIPATING EXPLOSION SHOCK ENERGY. THE COMPOSITION PROPOSED AND ITS BASIS FOR PERFORMANCE ARE EXPLAINED. SHOCK WAVE TESTING WILL BE UNDERTAKEN; AND BASED ON THE RESULTS, RECOMMENDATIONS WILL BE MADE FOR FUTURE PROJECT DIRECTION.

THE RESEARCH FOR AN ALTERNATE MEANS TO CRT TECHNOLOGY OF GENERATING VISUAL DISPLAY HAS BEEN UNDERWAY FOR YEARS. THE PROGRAM PROPOSED WILL DEFINE A METHOD OF PRODUCING A "CRT" TYPE OF VISUAL DISPLAY USING A LASER SCANNING CONCEPT PREVIOUSLY BASED ON WORK AT APA OPTICS, INC. THE PREVIOUS WORK DEFINED A METHOD OF GENERATING A NONMOVING PART SINGLE AXIS LASER SCAN GENERATOR. THIS PROGRAM WILL INVESTIG ...

USE OF ATOMIC LAYER EPITAXY IS BEING INVESTIGATED FOR GROWING SINGLE CRYSTAL ALGAN LAYERS. THE FORMATION OF NITROGEN VACANCIES IS EXPECTEDTO BE SUPPRESSED BY THE UNIQUE ATOMIC LAYER DEPOSITIONS AND THE EXCITATION OF NH3 GAS BY A LASER SOURCE. THIS SHOULD RESULT IN HIGH QUALITY LARGE AREA SINGLE CRYSTAL LAYERS OF ALGAN WHICH COULD BE USED TO MAKE SOLAR BLIND ULTRA-VIOLET (UV) SENSORS. THESE THIN EP ...

THE OBJECTIVES OF THE PROPOSAL EFFORT ARE TO IMPROVE THE RELIABILITY AND TO REDUCE THE FABRICATION COSTS OF SINGLE MODE FIBEROPTICS COUPLERS BY: 1. DEVELOPING THICK, SINGLE MODE WAVEGUIDES WITH IDENTICAL CROSS SECTIONAL PROFILE MATCHING THAT OF SINGLE MODE FIBERS; AND 2. LOCATING THESE FIBERS TO WAVEGUIDES, MADE OF ELECTROOPTIC MATERIAL, USING PREALIGNED ETCHED "V" GROOVES IN A GAAS SUBSTRATE. OUR ...

We propose to demonstrate the feasibility of fabricating a phototransistor using the A1xGa1-xN material system. The proposed phototransitor is based on a GaN-A1xGa1-xN heterojunction which exhibits a 2-D electron gas conduction when a bias is applied on the source-drain terminals. The device is maintained in a nominally OFF state by applying a reverse bias voltage on the gate terminal. With optica ...

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