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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Multi-chip Integration

    SBC: Acsist Associates, Inc.            Topic: N/A

    The goal of this research project is to determine the viability of an interconnect and probing technology which could be used to test and burn-in unpackaged semiconductors at system level speed, and at operating frequency, with voltage and with temperature margins verified. The focus of the research will be to address directly the most costly limitation to widespread MCM use; the problem of readil ...

    SBIR Phase I 1993 Department of DefenseDefense Advanced Research Projects Agency
  2. A Phototransistor Based on GaN-A1xGa1-xN Heterostructure

    SBC: Apa Optics, Inc.            Topic: N/A

    We propose to demonstrate the feasibility of fabricating a phototransistor using the A1xGa1-xN material system. The proposed phototransitor is based on a GaN-A1xGa1-xN heterojunction which exhibits a 2-D electron gas conduction when a bias is applied on the source-drain terminals. The device is maintained in a nominally OFF state by applying a reverse bias voltage on the gate terminal. With optica ...

    SBIR Phase I 1993 Department of DefenseAir Force
  3. Optoelectronic Integrated Circuits Based on Single Crystal GaN Waveguides

    SBC: Apa Optics, Inc.            Topic: N/A


    SBIR Phase I 1993 Department of DefenseAir Force

    SBC: Apa Optics, Inc.            Topic: N/A


    SBIR Phase I 1993 Department of DefenseNavy

    SBC: Carolinian Systems Research            Topic: N/A

    A new approach to signal detection and classification is applied to the problem of ASW and torpedo defense for shallow-water environments. The approach is particularly appropriate for applications where the statistics of the signal and the noise are unknown and highly variable. The primary goal is a significant improvement in the detection capability of sonar for ASW in coastal shallow water envir ...

    SBIR Phase I 1993 Department of DefenseNavy
  6. Evaluation of High Power 6H-SiC Microwave Field-Effect Transistors for High Temperature Operation

    SBC: CREE RESEARCH, INC.            Topic: N/A

    There is an increasing need in many military systems to have solid state microwave devices with higher power capability, higher reliability, and higher operating temperatures. These devices would be important for airborne radar systems, electronic warfare and countermeasure systems, and airborne and space-based communications systems. While conventional semiconductor materials such as SI and GaAs ...

    SBIR Phase II 1993 Department of DefenseAir Force
  7. Development of 6H-SIC CMOS Transistors for Insertion into a 3500C Operational Amplifier

    SBC: CREE RESEARCH, INC.            Topic: N/A

    Silicon carbide possesses a unique combination of properties, not available from other more common semiconductors, which allow it to operate in certain severe environments. These properties include a wide bandgap, a high melting point, high breakdown electric field, and high thermal conductivity, as well as excellent resistance to chemical attack and mechanical damage. As such, it is being examine ...

    SBIR Phase II 1993 Department of DefenseNavy
  8. 4H-Silicon Carbide for High Temperature Power MOSFETs

    SBC: CREE RESEARCH, INC.            Topic: N/A


    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  9. Advanced Design Tools for Evaluating Fault-Tolerant Systems

    SBC: Daina            Topic: N/A

    As mission critical avionics systems increase in complexity, the evaluation of their performance and reliability will become more difficult. We propose to select and to integrate a group of reliability and performance analysis tools, specifically designed to handle the fault-tolerant operational aspects of the next generation avionics architectures. These tools will support both hardware and softw ...

    SBIR Phase I 1993 Department of DefenseArmy
  10. Novel Doping Sources for III-V Molecular Beam Epitaxy

    SBC: Essential Research, Inc.            Topic: N/A

    The developement of four different doping sources for use within an MBE system is proposed. Two high purity, high uniformity sources for use with Carbon, and two such sources will be developed for use with Tellurium. The purity of the species produced by each cell will be studied with a Residual Gas Analyzer. Recommendations concerning the use of these cells in a solid source MBE system will be su ...

    SBIR Phase II 1993 Department of DefenseAir Force

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