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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Multi-chip Integration

    SBC: Acsist Associates, Inc.            Topic: N/A

    The goal of this research project is to determine the viability of an interconnect and probing technology which could be used to test and burn-in unpackaged semiconductors at system level speed, and at operating frequency, with voltage and with temperature margins verified. The focus of the research will be to address directly the most costly limitation to widespread MCM use; the problem of readil ...

    SBIR Phase I 1993 Department of DefenseDefense Advanced Research Projects Agency
  2. A Phototransistor Based on GaN-A1xGa1-xN Heterostructure

    SBC: Apa Optics, Inc.            Topic: N/A

    We propose to demonstrate the feasibility of fabricating a phototransistor using the A1xGa1-xN material system. The proposed phototransitor is based on a GaN-A1xGa1-xN heterojunction which exhibits a 2-D electron gas conduction when a bias is applied on the source-drain terminals. The device is maintained in a nominally OFF state by applying a reverse bias voltage on the gate terminal. With optica ...

    SBIR Phase I 1993 Department of DefenseAir Force
  3. Optoelectronic Integrated Circuits Based on Single Crystal GaN Waveguides

    SBC: Apa Optics, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseAir Force
  4. WAVELENGTH DIVISION MULTIPLEXED OPTICAL MODULATOR FOR ADVANCED COMMUNICATION SYS

    SBC: Apa Optics, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseNavy
  5. NEW GADOLINIUM-BORON COMPOUNDS FOR NEUTRON CAPTURE THERAPY

    SBC: BORON BIOLOGICALS, INC.            Topic: N/A

    NEUTRON CAPTURE THERAPY IS A VERY PROMISING THERAPY FOR CERTAIN TUMORS, SUCH AS GLIOMAS AND MELANOMAS. SEVERAL NUCLEI HAVE HIGH CROSS SECTIONS FOR THERMAL NEUTRONS, OF WHICH BORON-10 ((10)B) AND GADOLINIUM-157 ((157)GD) HAVE BEEN SHOWN TO BE VERY PROMISING. (10)B HAS A HIGH CROSS SECTION FOR THERMAL NEUTRONS AND A VERY VERSATILE CHEMISTRY. (157)GD HAS THE HIGHEST CROSS SECTION FOR THERMAL NEUTRONS ...

    SBIR Phase II 1993 Department of Energy
  6. IMPROVED DETECTION AND CLASSIFICATION FOR SHALLOW-WATER ASW

    SBC: Carolinian Systems Research            Topic: N/A

    A new approach to signal detection and classification is applied to the problem of ASW and torpedo defense for shallow-water environments. The approach is particularly appropriate for applications where the statistics of the signal and the noise are unknown and highly variable. The primary goal is a significant improvement in the detection capability of sonar for ASW in coastal shallow water envir ...

    SBIR Phase I 1993 Department of DefenseNavy
  7. Evaluation of High Power 6H-SiC Microwave Field-Effect Transistors for High Temperature Operation

    SBC: CREE RESEARCH, INC.            Topic: N/A

    There is an increasing need in many military systems to have solid state microwave devices with higher power capability, higher reliability, and higher operating temperatures. These devices would be important for airborne radar systems, electronic warfare and countermeasure systems, and airborne and space-based communications systems. While conventional semiconductor materials such as SI and GaAs ...

    SBIR Phase II 1993 Department of DefenseAir Force
  8. Development of 6H-SIC CMOS Transistors for Insertion into a 3500C Operational Amplifier

    SBC: CREE RESEARCH, INC.            Topic: N/A

    Silicon carbide possesses a unique combination of properties, not available from other more common semiconductors, which allow it to operate in certain severe environments. These properties include a wide bandgap, a high melting point, high breakdown electric field, and high thermal conductivity, as well as excellent resistance to chemical attack and mechanical damage. As such, it is being examine ...

    SBIR Phase II 1993 Department of DefenseNavy
  9. 4H-Silicon Carbide for High Temperature Power MOSFETs

    SBC: CREE RESEARCH, INC.            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  10. Advanced Design Tools for Evaluating Fault-Tolerant Systems

    SBC: Daina            Topic: N/A

    As mission critical avionics systems increase in complexity, the evaluation of their performance and reliability will become more difficult. We propose to select and to integrate a group of reliability and performance analysis tools, specifically designed to handle the fault-tolerant operational aspects of the next generation avionics architectures. These tools will support both hardware and softw ...

    SBIR Phase I 1993 Department of DefenseArmy
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