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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. DEVELOPMENT OF A MATERIAL FOR SUPPRESSION OF EXPLOSION SHOCK ENERGY

    SBC: ANALYTIC FOCUS, LLC            Topic: N/A

    THIS PROJECT WILL PREPARE FOR EVALUATION A MATERIAL WHICH SHOULD DEMONSTRATE SUPERIOR PERFORMANCE IN ABSORBING AND DISSIPATING EXPLOSION SHOCK ENERGY. THE COMPOSITION PROPOSED AND ITS BASIS FOR PERFORMANCE ARE EXPLAINED. SHOCK WAVE TESTING WILL BE UNDERTAKEN; AND BASED ON THE RESULTS, RECOMMENDATIONS WILL BE MADE FOR FUTURE PROJECT DIRECTION.

    SBIR Phase I 1988 Department of DefenseNavy
  2. INTEGRATED OPTICS LASER CRT DISPLAY GENERATION

    SBC: Apa Optics, Inc.            Topic: N/A

    THE RESEARCH FOR AN ALTERNATE MEANS TO CRT TECHNOLOGY OF GENERATING VISUAL DISPLAY HAS BEEN UNDERWAY FOR YEARS. THE PROGRAM PROPOSED WILL DEFINE A METHOD OF PRODUCING A "CRT" TYPE OF VISUAL DISPLAY USING A LASER SCANNING CONCEPT PREVIOUSLY BASED ON WORK AT APA OPTICS, INC. THE PREVIOUS WORK DEFINED A METHOD OF GENERATING A NONMOVING PART SINGLE AXIS LASER SCAN GENERATOR. THIS PROGRAM WILL INVESTIG ...

    SBIR Phase II 1988 Department of DefenseArmy
  3. ATOMIC LAYER CHEMICAL VAPOR DEPOSITION OF ALGAN FOR SOLAR BLIND ULTRAVIOLET DETECTORS

    SBC: Apa Optics, Inc.            Topic: N/A

    USE OF ATOMIC LAYER EPITAXY IS BEING INVESTIGATED FOR GROWING SINGLE CRYSTAL ALGAN LAYERS. THE FORMATION OF NITROGEN VACANCIES IS EXPECTEDTO BE SUPPRESSED BY THE UNIQUE ATOMIC LAYER DEPOSITIONS AND THE EXCITATION OF NH3 GAS BY A LASER SOURCE. THIS SHOULD RESULT IN HIGH QUALITY LARGE AREA SINGLE CRYSTAL LAYERS OF ALGAN WHICH COULD BE USED TO MAKE SOLAR BLIND ULTRA-VIOLET (UV) SENSORS. THESE THIN EP ...

    SBIR Phase II 1988 Department of DefenseMissile Defense Agency
  4. SINGLE MODE FIBER OPTICS COUPLER

    SBC: Apa Optics, Inc.            Topic: N/A

    THE OBJECTIVES OF THE PROPOSAL EFFORT ARE TO IMPROVE THE RELIABILITY AND TO REDUCE THE FABRICATION COSTS OF SINGLE MODE FIBEROPTICS COUPLERS BY: 1. DEVELOPING THICK, SINGLE MODE WAVEGUIDES WITH IDENTICAL CROSS SECTIONAL PROFILE MATCHING THAT OF SINGLE MODE FIBERS; AND 2. LOCATING THESE FIBERS TO WAVEGUIDES, MADE OF ELECTROOPTIC MATERIAL, USING PREALIGNED ETCHED "V" GROOVES IN A GAAS SUBSTRATE. OUR ...

    SBIR Phase I 1988 Department of DefenseNavy
  5. SOLID STATE LASER SCANNER FOR LASER ORDNANCE INITIATOR

    SBC: Apa Optics, Inc.            Topic: N/A

    THIS PROPOSAL ADDRESSES THE DEVELOPMENT OF A SOLID STATE LASER SCANNER FOR ROUTING A HIGH ENERGY LASER BEAM AMONG THE FIBER OPTIC ENERGY TRANSFER PATHS OF A LASER ORDNANCE INITIATION SYSTEM. A SOLID STATE LASER SCANNER WITH NO MOVING PARTS WILL ENABLE A MORE COMPACT AND DURABLE LASER ORDNANCE INITIATION SYSTEM. APA OPTICS' SOLID STATE LASER SCANNER UTILIZES INTERGRATED OPTIC WAVEGUIDES OF ALGAAS A ...

    SBIR Phase II 1992 Department of DefenseAir Force
  6. METALORGANIC ATOMIC LAYER EPITAXY FOR YBACUO SIS DETECTOR FABRICATION

    SBC: Apa Optics, Inc.            Topic: N/A

    THIS PROPOSAL DESCRIBES A PHASE I PROGRAM AIMED AT DEVELOPING SUPERCONDUCTOR INSULATOR SUPERCONDUCTOR (SIS) DETECTORS IN THIN FILMS OF YBACUO DEPOSITED ON SRTIO3 SUBSTRATES. WHEN OPERATEDIN THE QUANTUM MODE, OUR PROPOSED HTC BASED SIS DETECTOR CAN POTENTIALLY HAVE A VERY HIGH SENSITIVITY FOR LWIR DETECTION. WE PLAN TO USE AUNIQUE MOCVD BASED ATOMIC LAYER EPITAXY APPROACH. OUR SELECTION OF ATOMIC L ...

    SBIR Phase II 1992 Department of DefenseDefense Advanced Research Projects Agency
  7. VERTICAL CAVITY SURFACE EMITTING LASER MODULES FOR OPTICAL COMMUNICATION AND SIGNAL PROCESSING

    SBC: Apa Optics, Inc.            Topic: N/A

    VERTICAL CAVITY SURFACE EMITTING LASERS ARE UNDER DEVELOPMENT AT SEVERAL U.S. LABS WHICH CONSIST OF A GAAS/ALGAAS QUANTUM WELL FABRY-PEROT CAVITY SANDWICHED BETWEEN N AND P DOPED HIGH REFLECTIVITY SEMICONDUCTOR MIRRORS (GAAS/ALGAAS QUARTER WAVE STACKS). OUR PHASE I RESEARCH PROVES THE FEASIBLITY OF UNIQUE APPROACH TO THE ELECTRIC ADDRESSABILITY OF THESE SURFACE EMITTING LASERS. FOR ADDRESSING A (M ...

    SBIR Phase II 1992 Department of DefenseMissile Defense Agency
  8. A BURIED ELECTRODE MACH ZEHNDER WAVEGUIDE INTENSITY MODULATOR WITH OPERATION SPEEDS IN EXCESS OF 100 GHZ

    SBC: Apa Optics, Inc.            Topic: N/A

    THIS PROPOSAL DESCRIBES AN APA OPTICS PROGRAM TO DEVELOP A HIGH SPEED (100GHZ) GAAS WAVEGUIDE BASED MACH ZEHNDER MODULATOR. OUR APPROACH CENTERS ON THE USE OF A BURIED ELECTRODE CONFIGURATION TO ACHIEVE VELOCITY MATCHING OF THE RF AND OPTICAL SIGNALS. THIS WE FEEL WILL RESULT IN A DEVICE WITH A BROADBAND RESPONSE FROM DC TO 100GHZ. WE WILL WORK IN CONJUNCTION WITH THE ULTRFAST SCIENCE LAB AT THE U ...

    SBIR Phase I 1992 Department of DefenseArmy
  9. AlxGa(1-x)N High Electron Mobility Transistors for High Temperature Applications

    SBC: Apa Optics, Inc.            Topic: N/A

    GaN high electron mobility transistors or HEMTs are proposed for use as high temperature electronic devices. HEMTs are excellent for both power and low noise amplification since they posses a high carrier concentration and an enhanced carrier mobility. GaN has a large bandgap of 3.2 a, which gives it a greater breakdown voltage and a higher saturated electron velocity than GaAs. GaN, in addition, ...

    SBIR Phase I 1992 Department of DefenseNavy
  10. ATOMIC LAYER EPITAXY OF BORON NITRIDE

    SBC: Apa Optics, Inc.            Topic: N/A

    WE PROPOSE A PHASE I RESEARCH PROGRAM AIMED AT DEPOSITING SINGLE CRYSTAL BN FILMS OVER SAPPHIRE AND SILICON CARBIDE SUBSTRATES. OUR PLAN IS TO EMPLOY A UNIQUE PHOTO-ASSISTED SWITCHED ATOMIC LAYER EPITAXY PROCESS. THIS WE FEEL WILL REDUCE THE SINGLE CRYSTAL EPITAXY TEMPERATURE VALUES CLOSE TO 1400C. WE ALSO PROPOSE TO USE A UNIQUE MULTILAYER BUFFERING PROCEDURE TO DECREASE THE INTERFACE DEFECTS RES ...

    SBIR Phase I 1992 Department of DefenseAir Force
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