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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. ATOMIC LAYER EPITAXY OF GALLIUM-ARSENIDE IN A ROTATING-DISK REACTOR

    SBC: EMCORE CORP.            Topic: N/A

    N/A

    SBIR Phase I 1988 Department of DefenseMissile Defense Agency
  2. POINT OF USE GENERATION OF GASES FOR OPTOELECTRONIC DEVICE FABRICATION

    SBC: Electron Transfer Tech            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency
  3. ATOMIC LAYER EPITAXY OF GALLIUM-ARSENIDE IN A ROTATING-DISK REACTOR

    SBC: EMCORE CORP.            Topic: N/A

    ATOMIC LAYER EPITAXY (ALE) IS A PROMISING GROWTH TECHNIQUE. THE ATTRACTIVENESS OF ALE FOR FUTURE DEVICE AND INTEGRATED CIRCUIT APPLICATIONS CAN BE UNDERSTOOD BY CONSIDERING SEVERAL DESIRABLE ATTRI-BUTES FOR EPITAXIAL GROWTH TECHNIQUES. THESE INCLUDE LOWER DEFECT DENSITY, IMPROVED UNIFORMITY OF THICKNESS AND DOPING, IMPROVED THICKNESS CONTROL, AND THE POSSIBILITY OF CONFORMAL EPITAXY. A MAJOR PROBL ...

    SBIR Phase II 1990 Department of DefenseMissile Defense Agency
  4. METAL ORGANIC CHEMICAL VAPOR DEPOSITION GROWTH OF YTTRIUM BARIUM CARBON OXIDE ON LARGE AREA SUBSTRATES

    SBC: EMCORE CORP.            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency
  5. ALTERNATIVE ARSENIDE-SOURCES FOR II/V COMPOUND SEMICONDUCTOR DEVICE

    SBC: EMCORE CORP.            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency
  6. NIOBIUM NITROGEN JOSEPHSON JUNCTION STUDIES & DEVICES

    SBC: Martin Goffman Assoc.            Topic: N/A

    N/A

    SBIR Phase I 1990 Department of DefenseMissile Defense Agency
  7. ON-SITE GENERATION OF PHOSPHINE FOR ELECTRONIC DEVICES

    SBC: Electron Transfer Tech            Topic: N/A

    N/A

    SBIR Phase I 1991 Department of DefenseMissile Defense Agency
  8. IMPROVED PRECURSORS FOR THE METALORGANIC CVD OF YBCO THIN FILMS

    SBC: EMCORE CORP.            Topic: N/A

    THIS PROGRAM WILL DEVELOP SUITABLE PRECURSORS, PARTICULARLY FOR BARIUM WHICH EXHIBIT INCREASED VOLATILITY AND STABILITY IN THE METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) PROCESS OF HTSC FILMS BY PYROLYZING ORGANOMETALLIC PRECURSORS AT THE SUBSTRATE SURFACE. MOCVD OFFERS THE ADVANTAGES OF SCALE-UP CAPABILITY, HIGHLY OXIDIZING DEPOSITION CONDITIONS, LOW-TEMPERATURE DEPOSITION CAPABILITY, AND EXC ...

    SBIR Phase I 1991 Department of DefenseMissile Defense Agency
  9. ADVANCED EPITAXY PROCESS TECHNOLOGY FOR WIDE BANDGAP DEVICES

    SBC: EMCORE CORP.            Topic: N/A

    THE RESEARCH PROGRAM USES A NEW ADVANCED EPITAXIAL GROWTH TECHNIQUE, VAPOR TRANSPORT EPITAXY, TO RELIABLY AND REPEATEDLY FABRICATE A VARIETY OF COMPOUND SEMICONDUCTORS WITH HIGH THROUGHPUT AND OVER LARGE AREAS. THE COMPOUNDS OF SPECIAL INTEREST IN PHASE I ARE ZNSE (DIRECT BANDGAP 2.7 EV) AND ZNTE (DIRECT BANDGAP 2.3 EV), BECAUSE OF THEIR WIDE BANDGAP IN THE BLUE/BLUE-GREEN PORTION OF THE VISIBLE S ...

    SBIR Phase I 1991 Department of DefenseMissile Defense Agency
  10. HIGH CURRENT DENSITY HIGH-TEMPERATURE SUPERCONDUCTORS

    SBC: Gumbs Associates, Inc.            Topic: N/A

    A NOVEL CLASS OF HIGH TEMPERATURE SUPERCONDUCTORS, OXYGENATED CU PHTHALOCYANINES, IS PREPARED WHICH HAS GOOD MATCH BETWEEN CU AND OXYGEN ENERGY LEVELS AS IN EXTANT HIGH TEMPERATURE SUPERCONDUCTORS AS WELL AS FIRM PINNING OF MAGNETIC FLUX DUE TO A HIGH DENSITY OF DEFECTS. THESE TWO PROPERTIES YIELD HIGH TEMPERATURE COMBINED WITH HIGH CURENT DENSITIES ABSENT IN EXTANT MATERIALS. SYNTHETIC WORK IS BA ...

    SBIR Phase I 1991 Department of DefenseMissile Defense Agency

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