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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. Large Power X-Ray Laser for High Energy Beam Weapon

    SBC: Cns Technology            Topic: N/A

    The proposed work are (a) to design and develop a new generation large power, high brightness, compact structure and low cost column x-ray source, (b) to use the novel new x-ray source to build a large power x-ray laser for a high energy beam weapon. The proposed x-ray source is based on our patented non-conventional x-ray technology. A prototype column x-ray source will be fabricated and its perf ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  2. Crystal Growth in KTiOPO(4)-NaTiOPO(4)

    SBC: Crystal Associates Inc            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  3. Electroformed High Resolution Thick Metal Film for Hyper-Dense Electronic Packaging

    SBC: Electrochemical Systems, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  4. Sequential Growth of Diamond Thin Films in a Rotating Disc Reactor

    SBC: EMCORE CORP.            Topic: N/A

    Current difficulties in the growth of diamond thin films lie in their metastable characteristic and the requirements of non-equilibrium heteroepitaxial techniques for the single crystal growth. Sequential exposure of reactants using a microwave hydrogen plasma enhanced Atomic Layer Epitaxy (PE-ALE) reactor is proposed to promote two dimensional nucleation. In particular, use of halocarbon species ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  5. Atomic Layer Epitaxy of GaN in a Multi-Wafer Rotating Disc Reactor

    SBC: EMCORE CORP.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  6. Ultra-Small Silicon Particles for Above-Band-Gap Luminescence

    SBC: Martin Goffman Assoc.            Topic: N/A

    Silicon particles of miniscule dimension, so-called "quantum particles," will luminesce intensely when exposed to ultraviolet light. Using proprietary procedures, electrodes will be applied to these ultra-small quantum particles so that they may be made to electroluminesce. The process voltages will be compatible with the voltages for transistor circuitry. This work offers the promise of joining d ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  7. Virtual Memory Redundancy Management for Reliable Multiprocessing

    SBC: Gorca Technologies            Topic: N/A

    Modified computer-to-memory interface architecture and memory management executive software provide substantial increases in multiprocessor system reliability and throughput. The MIL-STD-1750A computer interface has a local cache memory using 8-word pages. The common main memory has fault tolerant data and address buses and fault tolerant data storage, with a page long word length, and hardware ar ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  8. Passive, Broadband Optical Shutter

    SBC: Gumbs Associates, Inc.            Topic: N/A

    Broad-band, dynamic (switchable), solid-state, ultrafast (sub-ns) optical shutter activated by a laser or other high intensity radiation source is provided based on novel interfaces of inorganic semiconductor (SC) electrodes with conducting polymers (CPs). The CPs, normally switched electrochemically between opaque and transparent states, are switched via direct charge transfer from photoexcitatio ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  9. Silicon Carbide Microsensor with Piezoresistive Diamond Sensing Elements

    SBC: KULITE SEMICONDUCTOR PRODUCTS, INC.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  10. SUPERCONDUCTING NON-RECIPROCAL DEVICES FOR MICROWAVE SYSTEMS

    SBC: NEOCERA, LLC            Topic: N/A

    HIGH TEMPERATURE SUPERCONDUCTING MICROWAVE PASSIVE COMPONENTS PROMISE TO SHRINK BY ONE TO TWO ORDERS OF MAGNITUDE, WHILE LOWERING THEIR LOSSES. SUPERCONDUCTING FILTER STRUCTURES, DELAY LINES AND HIGH-Q RESONATORS ALREADY HAVE BEEN DEMONSTRATED FROM LTHROUGH K-BAND AT TEMPERATURES UP TO 80K. REAL SYSTEMS ADVANTAGES ARE EXPECTED FROM THE INTEGRATION OF SUCH COMPONENTS INTO A COMPACT SUBSYSTEM THAT J ...

    SBIR Phase II 1992 Department of DefenseMissile Defense Agency
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