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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until April, 2020.

  1. Active Radio Frequency Applications

    SBC: Aria Microwave Systems, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  2. Crystal Growth in KTiOPO(4)-NaTiOPO(4)

    SBC: Crystal Associates Inc            Topic: N/A

    Phase I will study tailoring the refractive index elliposoid of KTP to permit Type II phase matching at wavelengths shorter than 900nm, thereby permitting the SHG of laser diodes and Ti:Al2O3 solid state lasers. The system of solid solutions from mixing KTP with CsTiOPO4 will be studied and crystals grown. The nonlinear optical, mechanical and electrical properties of these crystals will be determ ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  3. Crystal Growth of Li(6)Y(BO3)3:Nd(+3) for Solid State Laser

    SBC: Crystal Associates Inc            Topic: N/A

    THE HIGH TEMPERATURE SOLUTION (HTS) METHOD WILL BE USED TO PRODUCE CRYSTALS OF Li6Y(BO3)3 DOPED WITH Nd+3 FOR SOLID STATE LASER APPLICATIONS. A SUITABLE SOLVENT SYSTEM BASED ON LiF-LiBO3 WILL BE DEVELOPED TO GIVE OPTIMUM SIZE CRYSTALS. THE EFFECT OF Nd+3 CONCENTRATION ON CRYSTAL GROWTH AND LASER PROPERTIES WILL BE EVALUATED.

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency
  4. Electroformed High Resolution Thick Metal Film for Hyper-Dense Electronic Packaging

    SBC: Electrochemical Systems, Inc.            Topic: N/A

    20 microns thick metal film deposits at thin film resolutions will ensure densely integrated MCMs essential to advanced electronic devices such as onboard data and signal processing systems (OBDP). 99.8% dense and 99.8% pure monolithic and environmentally stable copper interconnects in analog applications will remove heat and control impedance with 5-10 times capacity. Two to three times higher ch ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  5. ON-SITE GENERATION OF PHOSPHINE FOR ELECTRONIC DEVICES

    SBC: Electron Transfer Tech            Topic: N/A

    PHOSPHINE (PH3) IS A GAS NECESSARY FOR MAKING COMPOUND SEMICONDUCTORS SUCH AS INP, INAS(1-X)PX, GAP, AND GAAS(1-X)PX AS WELL AS A DOPANT SOURCE FOR SILICON. IT IS A VERY TOXIC GAS WITH A TLV OF 0.3 PPM. NEW REGULATIONS MAKE THE TRANSPORT, STORAGE, AND HANDLING OF COMPRESSED GAS CYLINDERS OF PHOSPHINE INCREASINGLY DIFFICULT. TO AVOID THESE PROBLEMS, WE ARE DEVELOPING A COMPACT POINT OF USE PHOSPHIN ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  6. Atomic Layer Epitaxy of GaN in a Multi-Wafer Rotating Disc Reactor

    SBC: EMCORE CORP.            Topic: N/A

    GaN and other III-V nitrides can be used for fabricating visible/UV optoelectronic devices. Sequential exposure of reactants using a commercial microwave Plasma Enhanced Atomic Layer Epitaxy reactor is proposed to grow high quality GaN films. The technique allows two dimensional layer-by-layer growth which reduces nitrogen vacancies commonly observed in the GaN films. PE-ALE also allows deposition ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  7. Avalanche Photodiode for the 1.5-2.2 Micron Spectrum

    SBC: Sensors Unlimited, Inc.            Topic: N/A

    Sensors Unlimited will develop an "amplifier" device for near-infrared (1.5-2.1 micron) light signals. "APDs" operate by accelerating electrons (generated by incoming light signals) via a high electric field (voltage) and crashing them into the semiconductor crystal, thereby releasing additional electrons which in turn get accelerated and generate even more electrons. This "avalanche" or "multipli ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  8. Light Emitting Thin Films Containing Germanium Quantum Nanocrystals

    SBC: STRUCTURED MATERIALS INDUSTRIES, INC.            Topic: N/A

    The recent observation of light emission from porous silicon and from germanium nanocrystals in a silicon dioxide matrix has given a great boost to the field of quantum confined structures. It has been suggested that the formation of quantum wires in porous silicon is responsible for the observed emission. The confinement effects in quantum nanocrystals are even more pronounced. In preliminary mea ...

    SBIR Phase II 1993 Department of DefenseMissile Defense Agency
  9. Porous Polycrystalline Silicon Solar Cells

    SBC: STRUCTURED MATERIALS INDUSTRIES, INC.            Topic: N/A

    IT HAS BEEN SHOWN THAT EFFICIENT PHOTOLUMINESCENCE CAN BE OBSERVED FROM POROUS SILICON, WHEN THE POROSITY IS SUFFICIENTLY HIGH. THIS RESULT HAS BEEN ATTRIBUTED TO QUANTUM SIZE EFFECTS, DUE TO THE FORMATION OF SILICON "WIRES". IN RECENT WORK AIMED AT THE DEVELOPMENT OF LIGHT EMITTING DEVICES, WE HAVE ALSO DEMONSTRATED PHOTOLUMINESCENCE RANGING FROM IR, THROUGH THE VISIBLE, TO UV, IN Si AND Ge QUANT ...

    SBIR Phase I 1993 Department of DefenseMissile Defense Agency

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