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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. A Risk Reduction Process for Enhanced Mission Assurance

    SBC: ADVANCED CORE TECHNOLOGIES, LLC            Topic: MDA08021

    Advanced Core Technologies brings 3 advanced competencies together to identify, foster, and deploy technologies promising reliability enhancing materials and manufacturing innovations. Self-learning search methods, sophisticated information association techniques, and stochastic forecaasting enables the Technology Monitoring and Mapping Module (TM3) capable of 5, 10, and 20 year forecasts for pro ...

    SBIR Phase II 2010 Department of DefenseMissile Defense Agency
  2. Development for Radiation Hardened Applications of Advanced Electronics Materials, Processes, and Devices

    SBC: RNET TECHNOLOGIES INC            Topic: MDA09T006

    The Missile Defense Agency (MDA) seeks technical investigations related to the development and application of advanced electronic materials, processes, and devices to meet its need for radiation hardened, high performance electronics for critical space and missile applications. With the advent of smaller transistor dimensions and reductions in price per bit, significant changes in materials and pr ...

    STTR Phase I 2010 Department of DefenseMissile Defense Agency
  3. AlInN/GaN HFET over Free-Standing bulk GaN substrates

    SBC: Sensor Electronic Technology, Inc.            Topic: MDA09T001

    SET, Inc. proposes to develop lattice-matched AlInN/GaN HFET structure on free-standing GaN substrate. By employing native low-defect GaN substrates and by using lattice-matched heterostructures with the incorporation of indium, we expect dramatic enhancement of these HFET in power density, reliability and high frequency operation. Homoepitaxial growth on native substrate and the use of AlInN/GaN ...

    STTR Phase I 2010 Department of DefenseMissile Defense Agency
  4. AlInN/GaN heterostructures for X-band RF power amplification

    SBC: Sensor Electronic Technology, Inc.            Topic: MDA08024

    SETI proposed to develop the growth technology for lattice matched AlInN/GaN heterostructures and demonstrate the potential of this technology for high power, high frequency HFET RF power amplifiers. In Phase I, we successfully demonstrated MEMOCVD® growth of AlInN/GaN structures with Ga-free AlInN, the record sheet electron concentration and the record-breaking HFETs with peak drain currents ex ...

    SBIR Phase II 2010 Department of DefenseMissile Defense Agency
  5. Fabrication of Ta-Hf-C-based Ultra High Temperature Composites via a

    SBC: UES INC            Topic: MDA09T002

    This Phase I STTR program seeks a new fabrication method to produce stronger (>100 kpsi) and tougher (>10 MPa m1/2) ultra high temperature Ta-Hf-C-based composites (UHTC) with an outstanding oxidation resistance for use as thermal protection systems for hypersonic applications, as well as for advanced rocket nozzle throat components. UES will apply a novel "Top Down" approach to control the micro ...

    STTR Phase I 2010 Department of DefenseMissile Defense Agency
  6. A Development of Ceramic YAG Fibers for High Power Laser Applications

    SBC: UES INC            Topic: MDA09036

    In this Phase I work, UES will advance its current patented technology towards a novel ceramic process to produce high quality polycrystalline YAG fibers that meet the required properties for high power fiber laser applications. We show that YAG is far superior to silica as a material choice for fiber lasers, using a computational evaluation. UES has, over the past 5 years, developed a patented te ...

    SBIR Phase I 2010 Department of DefenseMissile Defense Agency
  7. High Rate Single Photon Sensitive Coded LADAR Receiver

    SBC: VOXTEL, INC.            Topic: MDA09038

    There is a need for a high-resolution two-dimensional focal plane array (FPA) with single photon sensitivity (SPS), pulse amplitude storage, and GHz bit rates that can record both the time (with 10 bits) from multiple returns from a single laser pulse. Such a system has the potential to significantly reduce LADAR size, weight, and power (SWAP) by alleviating the laser requirements. In this program ...

    SBIR Phase I 2010 Department of DefenseMissile Defense Agency
  8. Large-Format Dual-Use Radiation-Hard ROIC for IRFPAs and Star-Trackers

    SBC: VOXTEL, INC.            Topic: MDA09014

    New, modular radiation hard [>300 kRad (Si)] ROIC designs are required to address the needs of planned ballistic missile defense system. Anticipating the needs for large formats, small pixel sizes, and multiple spectral bands, the features of an existing radiation-hard space imager ROIC will be used to develop the design of an extensible 1024 × 1024, 15-μm pixel ROIC design. The design includes ...

    SBIR Phase I 2010 Department of DefenseMissile Defense Agency
  9. Non-Avalanche Gain Detector for High-Resolution Single-Photon and Dual Mode Applications

    SBC: VOXTEL, INC.            Topic: MDA09002

    Future seekers of the future will need to allow for multiple targets and various advanced countermeasures, likely including a dual-mode component to do so. A Dual Mode Seeker (DMS) has at least an infrared (IR) Focal Plane Array (FPA) as well as an active means to capture target range and preferably 3-D imagery. Future technology insertion will benefit from a monolithic dual mode focal plane, wher ...

    SBIR Phase I 2010 Department of DefenseMissile Defense Agency
  10. High Efficiency, Large-Area, 1550 nm InGaAs Photodiodes

    SBC: VOXTEL, INC.            Topic: N/A

    A back-illuminated planar InGaAs photodiode tested to have 95% quantum effiiency (QE) at 1550 nm, area greater than 1 mm2, low capacitance (125 MHz) will be improved. Although the existing Phase I device exhibited bulk material dark current generation better than commercially available devices, the sidewall-generated dark current was found to dominate the noise equiva ...

    SBIR Phase II 2010 Department of CommerceNational Institute of Standards and Technology
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