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The single most important type of metal/SiC junction is the n-type, rectifying Schottky diode, because it is the voltage blocking junction in all majority carrier devices. A reliable junction of this type for n-type SiC is the key to its development for high temperature, power conditioning electronics. Phase I will demonstrate that osmium is the ideal metal for forming such junctions. Phase II wil ...

Laser polarimetric/ellipsometric methods have been employed in our laboratory for the measurement of the normal spectral emissivities of solid and liquid materials at elevated temperatures. In this approach, a polarized light source is incident on the surface of interest at oblique incidence, and the reflected polarization state is measured in about 0.5 ms. The optical properties of the surface, ...

InP based heterojunction bipolar transistors (HBTs) exhibit proven potential for use in high performance digital integrated circuits and discrete microwave components. For high speed applications, it is desirable to utilize structures that have been designed to promote high levels of nonequilibrium electron transport as this allows realization of higher electron velocities than possible for diffus ...

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CRYOCOOLER MICROELECTROMECHANICAL MICRODYNAMICS INTEGRATED GENERAL PNEUMATICS CORP'S PRELIMINARY DESIGN FOR EMPLOYING MICRODYNAMICS TO PRODUCE MICROELECTROMECHANICAL CLOSED-CYCLE CRYOCOOLERS USING SILICON PROCESSING TECHNIQUES WILL BE USED FOR MAKING INTEGRATED CIRCUITS IN PHASE 1. MICROMINIATURE COOLERS WILL BE INTEGRATED AT THE WAFER SCALE WITH A WIDE VARIETY OF SENSORS AND OTHER COLD ELECTRONIC ...

Solid-state electronic devices are often subjected to high voltage transients generated by switching, lightning, or electrostatic discharge. These transients can cause mission critical components to fail. Varistors are increasingly used to avoid such failures. The current varistor devices, however, are not well suited for high frequency applications and the increasing trend towards device miniatur ...

Inductors are essential components of military and commercial power management and electronic systems. Existing ferrite based inductors have reached a technology plateau that allow only marginal improvements in performance per unit volume. It is anticipated that the future inductor based technologies, such as EMI suppression, would require significantly higher energy density inductors. Fundamental ...

THE GOAL OF THE PROPOSED RESEARCH IS TO DEVELOP A PROCESS GROW DEVICE QUALITY Si-Ge-C STRAIN LAYERS HETEROEPITAXIALLY ONTO SINGLE CRYSTAL SILICON SUBSTRATES. Si-Ge-C ALLOYS WILL MAKE POSSIBLE A NEW CLASS OF HETEROJUNCTION DEVICES IN WHICH THE BANDGAP CAN BE TAILORED TO BE WIDER OR NARROWER THAN SILICON, AND IN WHICH PARTIAL OR COMPLETE STRAIN COMPENSATION IS POSSIBLE. INITIAL PROCESS DEVELOPMENT W ...

Global production and use of ceramic capacitors exceeds several hundred million units per day. With the projected growth in demand for more demanding electronic products, electronic vehicles and related technologies, the need for more reliable, higher energy density, higher power density, higher breakdown strength, efficient ceramic capacitors can not be overstated. Multilayered ceramic capacitors ...

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