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Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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X-BAND, AIR-TO-AIR RADAR SIDELOBE CLUTTER MITIGATION THROUGH ADAPTIVE PROCESSING X-BAND, AIR-TO-AIR RADAR SIDELOBE CLUTTER MITIGATION THROUGH ADAPTIVE PROCESSING
SBC: Adaptive Sensors Inc. Topic: N/AAN ADAPTIVE ARRAY SIGNAL PROCESSOR CAPABLE OF ADAPTIVELY NULLING MULTIPE SIDELOBE JAMMERS AND SIDELOBE DISTRIBUTED AND DISCRETE GROUND CLUTTER RETURNES COMPETING WITH THE TARGET RETURN, IN AI-LOW OBSERVABLE TARGET DETECTING MEDIUM-PRF RADARS IS THE SUBJECT OF A DESIGN STUDY. THE ASI-DEVELOPED AIRBORNE RADAR ADAPTIVE ARRAY SIMULATION TEST BED (IMPLEMENTED IN A PC-286 COMPUTER) IS PROPOSED TO BE USE ...
SBIR Phase II 1992 Department of DefenseAir Force -
ADAPTIVE ARRAY TECHNOLOGY FOR TRANSPORTABLE LONG WAVELENGTH GROUND-BASED BISTATIC RADAR SYSTEMS
SBC: Adaptive Sensors Inc. Topic: N/ALONG WAVELENGTH GROUND-BASED MULTISTATIC RADAR SYSTEMS WHICH MAY BE IN THE HF, VHF, OR UHF BANDS OFFER POTENTIAL SOLUTIONS TO THE PROBLEMS ASSOCIATED WITH PERFORMING THE TACTICAL ARMY MISSION OF FOREWARD AREA AIR DEFENSE (FAAD) AND WEAPONS LOCATION WITH MONOSTATIC SHORT WAVELENGTH RADARS. HOWEVER, SIGNIFICANT PROBLEMS ARE ALSO INTRODUCED WITH THE USE OF THESE LONG WAVELENGTH BISTATIC RADAR SYSTEMS ...
SBIR Phase II 1992 Department of DefenseArmy -
SPACE-TIME ADAPTIVE PROCESSING IN BISTATIC AIRBORNE RADARS
SBC: Adaptive Sensors Inc. Topic: N/AMONOSTATIC RADAR SYSTEMS USING SPACE-TIME ADAPTIVE PROCESING (STAP) HAVE BEEN SIMULATED IN DETAIL AND SHOWN TO PROVIDE LARGE IMPROVEMENTS IN MOVING TARGET DETECTION. AND TRACKING CAPABILITY. THE PROPOSED STUDY WILL APPLY STAP TECHNOLOGY TO BISTATIC RADARS WITH AIRBORNE RECEIVERS AND AIRBORNE OR STATIONARY TRANSMITTERS. CANCELLATION OF CLUTTER IN A BISTATIC RADAR IS COMPLICATED BY THE RAPIDLY VARYI ...
SBIR Phase I 1992 Department of DefenseAir Force -
NOVEL PROCESS FOR THE BULK GROWTH OF SIC SINGLE CRYSTALS
SBC: Advanced Technologies/Laboratories Intl Topic: N/ATHE NEXT GENERATION OF HIGH POWER, HIGH FREQUENCY ELECTRONIC DEVICE TECHNOLOGY WILL BE BASED ON WIDE BANDGAP SEMICONDUCTOR MATERIALS SUCH AS SIC, GAN AND DIAMOND. OF THESE, SILICON CARBIDE IS THE MOST PROMISING MATERIAL FOR NEAR TERM APPLICATIONS, SINCE ITS PROCESSING SHARES MANY COMMON FEATURES WITH WELL-ESTABLISHED SILICON PROCESSING. TECHNOLOGY HAS BEEN DEMONSTRATED FOR PRODUCING OHMIC AND SCHO ...
SBIR Phase II 1992 Department of DefenseAir Force -
NOVEL MOLECULAR SOURCES FOR DISPERSING BORON IN CARBON-CARBON COMPOSITES
SBC: Advanced Technologies/Laboratories Intl Topic: N/AIMPROVING THE OXIDATION RESISTANCE OF CARBON-CARBON COMPOSITES IS KEY TO EXPANDING THE USE OF THIS MATERIAL SYSTEM INTO HIGHER TEMPERATURE APPLICATIONS. WHILE BORON PARTICLES HAVE BEEN ADDED TO THESE MATERIALS TO SEAL CRACKS IN PROTECTIVE COATINGS, OXIDATION OF THE CARBON MATRIX NEIGHBORING THE BORON PARTICLES SERIOUSLY AFFECTS COMPOSITE STRENGTH. THIS PROBLEM IS EXACERBATED BY A NATURAL SEGREGATI ...
SBIR Phase II 1992 Department of DefenseAir Force -
MOCVD OF HTSC: PROCESS DEVELOPMENT FOR UNIFORM LARGE AREA GROWTH
SBC: Advanced Technologies/Laboratories Intl Topic: N/ASEVERAL METHODS, INCLUDING SPUTTERING, E-BEAM EVAPORATION, LASER ABLATION AND METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD), HAVE SUCCEEDED IN DEPOSITING HIGH QUALITY THIN FILMS OF HIGH TEMPERATURE SUPERCONDUCTORS (HTSC) ON 1 CM2 SUBSTRATES. HOWEVER, THE GROWTH OF HIGH QUALITY THIN FILMS OVER LARGE AREAS HAS YET TO BE ACHIEVED AND PROCESS REPRODUCIBILITY IS MARGINAL. THESE TWO SHORTCOMINGS ARE TH ...
SBIR Phase II 1992 Department of DefenseArmy -
CONTACTS FOR DIAMOND SEMICONDUCTOR DEVICES
SBC: Advanced Technologies/Laboratories Intl Topic: N/ASEMICONDUCTOR DEVICES THAT PROVIDE RELIABLE HIGH POWER OR OPERATE AT EXTREMELY HIGH FREQUENCY IN HARSH ENVIRONMENTS SUCH AS SUSTAINED HIGH RADIATION LEVELS ARE REQUIRED FOR ASAT APPLICATIONS. THIS NEED FOR DEVICES THAT CAN OPERATE AT INCREASED TEMPERATURES OR WITH MINIMUM RADIATIVE COOLING HAS BEEN SPAWNED BY THE SIGNIFICANT ENGINEERING PROBLEMS ASSOCIATED WITH THE COOLING REQUIREMENTS OF ELECTRON ...
SBIR Phase II 1992 Department of DefenseArmy -
BARRIER LAYER FOR EPITAXIAL BATIO3 FILMS ON SILICON
SBC: Advanced Technologies/Laboratories Intl Topic: N/ASINGLE CRYSTAL BATIO3 HAS ELECTRO-OPTIC AND PHOTOREFRACTIVE PROPERTIES THAT ARE AMONG THE MOST DESIRABLE OF ALL INORGANIC MEDIA. THE MATERIAL ALSO POSSESSES FERROELECTRIC PROPERTIES AND AN EXCEPTIONALLY HIGH DIELECTRIC CONSTANT, WHICH MAKE BATIO3 FILMS HIGHLY ATTRACTIVE FOR RADIATION HARD AND DRAM ELECTRONIC MEMORIES. USE OF BATIO3 FILMS FOR INTEGRATED ELECTRO-OPTICS WILL REQUIRE LOW OPTICAL LOSSE ...
SBIR Phase I 1992 Department of DefenseAir Force -
ORGANOARSINE REPLACEMENTS FOR ARSINE IN MOCVD
SBC: Advanced Technologies/Laboratories Intl Topic: N/AORGANOMETALLIC VAPOR PHASE EPITAXY (OMVPE) IS A PROMISING TECHNIQUE FOR PRODUCING ULTRAHIGH PURITY III-V COMPOUND SEMICONDUCTOR. OMVPE CAN PRODUCE COMPLEX LAYERED STRUCTURES WITH THE ABRUPT INTERFACES REQUIRED FOR ADVANCED ELECTRONIC AND PHOTONIC DEVICES. UNFORTUNATELY, OMVPE CURRENTLY REQUIRES EXTREMELY TOXIC AND/OR PYROPHORIC GASES STORED UNDER PRESSURE IN LARGE VOLUMES. THESE GASES REPRESENT SE ...
SBIR Phase I 1992 Department of DefenseArmy -
BIMETALLIC SOURCE REAGENTS FOR THIN FILM DEPOSITION OF LEAD TITANATE AND PZT
SBC: Advanced Technologies/Laboratories Intl Topic: N/AMETALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) HAS BECOME A SUCCESSFUL THIN FILM GROWTH TECHNIQUE DUE TO ITS INHERENT CONTROL OVER FILM COMPOSITION, PURITY, UNIFORMITY AND DEPOSITION RATE. THIN FILM TECHNOLOGY FOR FERROELECTRIC MATERIALS SUCH AS LEAD TITANATE AND PZT IS IN GREAT DEMAND DUE TO MANY APPLICATIONS IN PEIZOELECTRIC AND OPTOELECTRIC DEVICES. THE ELECTRONIC PROPERTIES OF THE THIN FILM AR ...
SBIR Phase I 1992 Department of DefenseArmy