Award Data

We propose a unique GaN-Al(sub x)Ga(sub 1-x)N heterojunction based CCD for imaging in the ultraviolet (wavelengths less than 365 nm). Our proposed device will be solid state, TTL compatible and in it's final configuration solar blind. The Phase I program is aimed at establishing the technical feasibility of our device concept. Our proposed CCD is in essence a GaN-AlGaN gated photoconductor with ...

This proposal describes new low cost, low risk semiconductor-based approaches to fuze trigger circuit technology. These innovative approaches build on the promising new technology platform developed by ARIA as part of earlier SBIR research. ARIA's technology platform, initially developed for driving extremely high speed (400 picosecond rise time), high peak current pulses (400A) through laser di ...

The objective of the proposed effort is to design an all solid-state, eye-safe (1.5 um) laser that will abe superior to existing eye-safe lasers in terms of power, efficiency, cost, and beam quality. The proposed laser system is based on solid-state Raman shifting of Nd:YAG laser radiation using barium nitrate. Several designs will be presented and performance characteristics (based on properties ...

Recent technological advancements in the growth of bulk single crystal, ternary, III-V alloys strongly indicate the potential for commercial feasibility of these alloy substrates. Commercial availability will permit realization of the concept of substrate engineering. Based on reported developments in the (In,Ga)As and (In,Ga)Sb ternary systems, we propose to develop a materials technology for t ...

We propose to develop a novel technology for fabricating high speed integrated photoreceiver MMIC chips on the InP substrate. The in- novation consists of a new, unique, optically resonant, high speed InO.53GaO.47As photodetector that has a wavelength selective response. This resonant detector not only has improved quantum efficiency over conventional InGaAs high speed photodetectors, but also dis ...

A solution to the problem of interchip interconnects is proposed that employs electro-optical links implemented monolithically on silicon substrates. This approach addresses the fundamental material incompatibility problem of opto-electronics by implementing electronics in silicon and optical components using III-V compounds on a single chip. This is made possible through the use of "selective e ...

N/A

N/A

This effort will address five problems in the process design of heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs): (1) HEMT thermal impedances will be measured using a novel method and will be compared with finite-element simulations to provide more accurate values for computer-aided design programs. (2) The role of the spacer layer in HEMT performance and ...

AgGaS2 crystals have attractive nonlinear properties. However, their low surface laser damage threshold limits their application for the generation of tunable laser radiation from 2 to 12 microns. We propose to grow single crystals, anneal them with a new process, and characterize the properties of polished crystals. Our objective is to understand the mechanism for surface laser damage ...