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THE CONCEPT OF PHOTOAFFINITY IMMOBILIZATION OF SPECIFIC BINDING PROTEINS HAS BEEN PATENTED AND REDUCED TO PRACTICE WITH ANTIBODY ON GLASS BY THIS COMPANY. THE DEVELOPMENT OF ADDITIONAL REAGENTS AND REACTION PROCEDURES IS PROPOSED FOR THE AFFINITY COUPLING (COVALENT) OF RECEPTOR MOLECULES (ESPECIALLY ANTIBODIES) TO THE ACTIVATED SURFACE OF PASSIVATED (BY HYDROPHILIC SPACER COATING) SILICON-BASED SE ...

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THE PROPOSED PROJECT "ESTIMATING SOFTWARE EFFORT COMPLETION"INTENDS TO DEVELOP AND EXTEND A TECHNOLOGY TO AVOID COSTLY SOFTWARE PROJECT BUDGET OVERRUNS. THE TECHNOLOGY, EFFORT COMPLETION ESTIMATING, IS BASED ON A MATHEMATICAL MODELING TECHNIQUE CALLED ELEMENT ASSOCIATION MATRICES. THE FULLY DEVELOPED TECHNOLOGY WOULD ALLOW SOFTWARE PROJECT BUDGETS TOBE BETTER ESTIMATED IN ADVANCE AND EFFECTIVELY M ...

THIS RESEARCH WILL SHOW FEASIBILITY FOR A NEW MEMORY CELL USING MAGNETIC FILMS AND HIGH CRITICAL TEMPERATURE SUPERCONDUCTORS (HCTS) WHICH IS PARTICULARLY SUITABLE FOR SUPERCOMPUTER MASS MEMORIES. MAGNETORESISTIVE RANDOM ACCESSMEMORY (MRAM) TECHNOLOGY HAS PROJECTED DENSITIES IN EXCESS OF 10(8) BITS/CM(2), BUT AT THESE HIGH DENSITIES READ ACCESSTIMES ARE LIMITED TO ABOUT 10US. WITH THIS PROPOSED MEM ...

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THIS PROPOSAL DESCRIBES AN SBIR PROJECT TO RESEARCH AND DEVELOP GALLIUM ARSENIDE ANALOG PREPROCESSING ELECTRONICS (GAPE) FOR INFRARED FOCAL PLANE ARRAY (IR-FPA) SENSORS. TOP-VU TECHNOLOGY PROPOSES AN INTEGRATED ANALOG PREPROCESSORWHICH USES GAAS LINEAR INTEGRATED CIRCUITS FOR HIGH-PERFORMANCE READOUT AND PREPROCESSING FUNCTIONS IN LINEAR Z-DIMENSION. THIS IS TO FILL THE NEED OF HIGH-SPEED PREPROCE ...

THIS IS A PROPOSAL RESEARCH LEADING TO THE DEVELOPMENT OF A NEW CLASS OF SUPERCONDUCTING MAGNETIC SENSORS UTILIZING HIGHTC COPPER OXIDE BASED SUPERCONDUCTORS. THEY ARE EXPECTED TO OFFER BETTER PERFORMANCE THAN NONSUPERCONDUCTING INSTRUMENTS, AT A MUCH LOWER COST THAN THAT OF PRESENT LOW TC INSTRUMENTS. THESE SENSORS COMBINE A SUPERCONDUCTING PICKUP LOOP, TOGETHER WITH NON-SUPERCONDUCTING FLUXGATE ...

RESONANT INTERBAND TUNNEL DIODES (RITD'S) ARE A NEW NEGATIVE RESISTANCE DEVICE, WITH POTENTIAL FOR VERY HIGH SPEED, LARGE PEAK TO VALLEY RATIOS, AND THE POTENTIAL FOR CUSTOMIZED I/V CURVES. THESE DEVICES ARE BELIEVED TO BE CAPABLE OF SWITCHING IN \2PS., OR OF OFFERING GAIN IN THE TERAHZ RANGE. POTENTIAL APPLICATIONS INCLUDE THE GENERATION, AMPLIFICATION, AND DETECTION OF TEREHZ RANGE SIGNALS, AND ...