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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. A GaN-A1GaN CCD for UV Imaging Applications

    SBC: Apa Optics, Inc.            Topic: N/A

    We propose a unique GaN-Al(sub x)Ga(sub 1-x)N heterojunction based CCD for imaging in the ultraviolet (wavelengths less than 365 nm). Our proposed device will be solid state, TTL compatible and in it's final configuration solar blind. The Phase I program is aimed at establishing the technical feasibility of our device concept. Our proposed CCD is in essence a GaN-AlGaN gated photoconductor with ...

    SBIR Phase II 1996 Department of DefenseAir Force
  2. Low Cost, High Energy Semiconductor Switches

    SBC: Aria Corp            Topic: N/A

    This proposal describes new low cost, low risk semiconductor-based approaches to fuze trigger circuit technology. These innovative approaches build on the promising new technology platform developed by ARIA as part of earlier SBIR research. ARIA's technology platform, initially developed for driving extremely high speed (400 picosecond rise time), high peak current pulses (400A) through laser di ...

    SBIR Phase I 1996 Department of DefenseAir Force
  3. Pre-Award Systems Acquisition Processing System (PASAPS)

    SBC: Frontline Solutions Inc            Topic: N/A

    N/A

    SBIR Phase I 1996 Department of DefenseAir Force
  4. HEMT and HBT Process Design

    SBC: Gateway Modeling, Inc            Topic: N/A

    This effort will address five problems in the process design of heterojunction bipolar transistors (HBTs) and high electron mobility transistors (HEMTs): (1) HEMT thermal impedances will be measured using a novel method and will be compared with finite-element simulations to provide more accurate values for computer-aided design programs. (2) The role of the spacer layer in HEMT performance and ...

    SBIR Phase II 1996 Department of DefenseAir Force
  5. High Density Shock Survivable Microelectronics

    SBC: NVE CORP. (FORMERLY NONVOLATILE ELECTRONICS, INC.            Topic: N/A

    N/A

    SBIR Phase I 1996 Department of DefenseAir Force
  6. Enhancing the Accuracy and Utility of Performance Measurement in the AF

    SBC: Personnel Decisions Research            Topic: N/A

    Final course grades in military technical schools are frequently used as the criterion in assessing the validity of a variety of cognitive, perceptual, and psychomotor ability tests. PDRI proposes an innovative approach to criterion development for use by AF researchers. During the proposed Phase I SBIR effort, we plan to begin development of two sets of criterion measures. The first set will b ...

    SBIR Phase II 1996 Department of DefenseAir Force
  7. Secure Data Sharing

    SBC: SECURE COMPUTING CORP.            Topic: N/A

    N/A

    SBIR Phase I 1996 Department of DefenseAir Force
  8. Smart Linear Motion Oven (LIMO) for Precision Group III Beam Flux Control in MBE

    SBC: SVT ASSOCIATES INC            Topic: N/A

    Molecular Beam Epitaxy (MBE) is a key fabrication technology for high performance III-V and other semiconductor devices of importance to many DoD and commercial applications. A variable group III element source flux would provide agile vertical layer composition control required for sophisticated device fabrication. One recent source concept, Linear Motion Oven or LIMO, appears especially promisi ...

    SBIR Phase II 1996 Department of DefenseAir Force
  9. Epitaxial Growth of Silicon Carbide (SiC) on Compliant Substrates by Ion Enhanced MBE

    SBC: SVT ASSOCIATES INC            Topic: N/A

    Silicon carbide is a semiconductor ideally suited for high power, frequency, speed and temperature applications. This project proposes a unique ion beam synthesis method of epitaxial silicon carbide on compliant substrates. The technique produces low energy, high current ions to promote surface mobility for high quality epitaxy. This ion synthesis method bypasses the usual thermal p ...

    SBIR Phase I 1996 Department of DefenseAir Force
  10. FIBER BRAGG GRATING CRYOGENIC TEMPERATURE SENSORS

    SBC: SVT ASSOCIATES INC            Topic: N/A

    N/A

    SBIR Phase II 1996 Department of DefenseAir Force
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