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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. METHODS FOR REDUCING PLASMA EFFECTS ON THE NASP

    SBC: ACCURATE AUTOMATION CORPORATION            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseAir Force
  2. PARALLEL NEURAL NETWORK TOOLBOX FOR SUPERCOMPUTERS

    SBC: ACCURATE AUTOMATION CORPORATION            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseAir Force
  3. SOLID STATE LASER SCANNER FOR LASER ORDNANCE INITIATOR

    SBC: Apa Optics, Inc.            Topic: N/A

    THIS PROPOSAL ADDRESSES THE DEVELOPMENT OF A SOLID STATE LASER SCANNER FOR ROUTING A HIGH ENERGY LASER BEAM AMONG THE FIBER OPTIC ENERGY TRANSFER PATHS OF A LASER ORDNANCE INITIATION SYSTEM. A SOLID STATE LASER SCANNER WITH NO MOVING PARTS WILL ENABLE A MORE COMPACT AND DURABLE LASER ORDNANCE INITIATION SYSTEM. APA OPTICS' SOLID STATE LASER SCANNER UTILIZES INTERGRATED OPTIC WAVEGUIDES OF ALGAAS A ...

    SBIR Phase II 1992 Department of DefenseAir Force
  4. ATOMIC LAYER EPITAXY OF BORON NITRIDE

    SBC: Apa Optics, Inc.            Topic: N/A

    WE PROPOSE A PHASE I RESEARCH PROGRAM AIMED AT DEPOSITING SINGLE CRYSTAL BN FILMS OVER SAPPHIRE AND SILICON CARBIDE SUBSTRATES. OUR PLAN IS TO EMPLOY A UNIQUE PHOTO-ASSISTED SWITCHED ATOMIC LAYER EPITAXY PROCESS. THIS WE FEEL WILL REDUCE THE SINGLE CRYSTAL EPITAXY TEMPERATURE VALUES CLOSE TO 1400C. WE ALSO PROPOSE TO USE A UNIQUE MULTILAYER BUFFERING PROCEDURE TO DECREASE THE INTERFACE DEFECTS RES ...

    SBIR Phase I 1992 Department of DefenseAir Force
  5. Novel Doping Sources for III-V Molecular Beam Epitaxy

    SBC: Essential Research, Inc.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseAir Force
  6. HIGH RATE THERMAL BATTERY FOR SPACE APPLICATIONS

    SBC: Molten Salt Technology, Inc.            Topic: N/A

    FEASIBILITY OF A THERMAL CELL LITHIUM/SULFUR(IV) IN AN ALCL*3*/LICL MELT WILL BE INVESTIGATED. THIS CELL IS RELATED TO THE RECHARGEABLE SODIUM/SULFUR(IV) BATTERY SYSTEM INVOLVING THE MOLTEN ALCL*3*/NACL MELT AND THE B"-ALUMINA SEPARATOR. A SOLID LITHIUM ALLOY ANODE WILL BE SUBSTITUTED FOR MOLTEN SODIUM TO PREVENT MELTING UPON ACTIVATION AND TO INCREASE THE ENERGY DENSITY WHILE THE B"-ALUMINA SEPAR ...

    SBIR Phase I 1992 Department of DefenseAir Force
  7. DEVELOPMENT OF MEMBRANE SAMPLING SYSTEM TO CONCENTRATE TOXIC ENVIRONMENTAL COMPOUNDS FOR RAMAN SPECTROSCOPY ANALYSIS

    SBC: NeoMecs Inc.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseAir Force
  8. A SEMI-AUTOMATED DOWNGRADER FOR MLS NETWORK GUARDS

    SBC: SECURE COMPUTING CORP.            Topic: N/A

    N/A

    SBIR Phase I 1992 Department of DefenseAir Force
  9. AUTOMATED MBE PROCESS WITH REAL TIME SENSOR CONTROL

    SBC: SVT ASSOCIATES INC            Topic: N/A

    WE PROPOSE AN AUTOMATED MOLECULAR BEAM EPITAXY (MBE) PROCESS FOR REPRODUCTABLE GROWTH OF SEMICONDUCTOR DEVICE STRUCTURES. WE WILL APPLY RHEED AND THERMAL OSCILLATION TECHNIQUES TO CONTROL THE RATE ANDCOMPOSITION OF THE LAYERS AND TO ENSURE THAT THE GROWTH PROCEEDS UNDEROPTIMUM CONDITIONS. A MASS SPECTROMETER WILL BE USED TO CONTROL DOPANT INCORPORATION LEVELS. FLUXES FOR OPTIMUM GROWTH OF THE DIFF ...

    SBIR Phase II 1992 Department of DefenseAir Force
  10. PRECISE FLUX CONTROL FOR LATTICE MATCHED SUPERLATTICE MATERIALS

    SBC: SVT ASSOCIATES INC            Topic: N/A

    AN EFFECTIVE METHOD FOR REDUCING FLUX TRANSIENTS IN MOLECULAR BEAM EPITAXY (MBE) EFFUSION CELL SOURCE IS PROPOSED. MBE IS A USEFUL TECHNIQUE FOR FABRICATING MANY IMPORTANT ELECTRONIC AND OPTOELECTRONIC DEVICES WHOSE PERFORMANCE DEPENDS CRITICALLY ON REPRODUCIBLE MATERIAL STRUCTURES. TIGHT CONTROL OF THE STRUCTURES IS OFTEN HINDERED BY FLUX TRANSIENTS DURING SOURCE SHUTTER OPERATION. WE PROPOSE A M ...

    SBIR Phase I 1992 Department of DefenseAir Force
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