Award Data

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The Award database is continually updated throughout the year. As a result, data for FY19 is not expected to be complete until September, 2020.

  1. Chip-to-Chip Optical Interconnects Using Integrated Photonic Crystal Lightwave Circuits

    SBC: OPTICOMP CORP.            Topic: AF03T021

    The goal of this Phase II STTR program is to develop photonic crystal (PC) technologies which can enable photonic lightwave circuits (PLC¡¦s) that are monolithically integrable with optoelectronic devices and wafers, thereby providing a new technology platform for the heterogeneous integration of photonic and optoelectronic functions. This can significantly increase the density of lightwave circ ...

    STTR Phase II 2005 Department of DefenseAir Force
  2. High Power IMPATT-Mode AlGaN/GaN HFETs for mm-Wave Applications

    SBC: SVT ASSOCIATES, INCORPORATED            Topic: A05T008

    A new Aluminum gallium nitride (AlGaN) based heterojunction field-effect transistor (HFET) structure is proposed that utilizes avalanche impact ionization for very high frequency operation (>100 GHz). The main goal of this program is to demonstrate the potential of these devices as a replacement for vacuum tubes in mm-wave applications including radars and communications transmitters. In the Pha ...

    STTR Phase I 2005 Department of DefenseArmy
  3. Autonomous Broad Spectrum Environmental Sentinels

    SBC: Nevada Nanotech Systems Inc.            Topic: A13AT017

    We propose a platform for aerial environmental monitoring based on the integration of two advanced technologies for the first time: a lightweight, flying robotic platform capable of hovering and swarming, and a compact, low-power chemical sensor platform called the Molecular Property Spectrometer (MPS): a robust, low-cost, silicon-chip-based micro-electro-mechanical system (MEMS) that has been use ...

    STTR Phase I 2014 Department of DefenseArmy
  4. Solar Blind MgZnO Photodetectors

    SBC: AGNITRON TECHNOLOGY, INC            Topic: A13AT006

    This project address the fabrication of solar blind detectors from the MgZnO material system. Both MBE and MOCVD material growth techniques will be used for deposition of the required material layers. Simulation software we be used to aid in the design of the photodetector structure. Devices will be fabricated from the grown structures and their electrical and optical characteristics determined.

    STTR Phase II 2014 Department of DefenseArmy
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