You are here
Award Data
The Award database is continually updated throughout the year. As a result, data for FY24 is not expected to be complete until March, 2025.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
-
Concurrent Design of a Multimaterial Niobium Alloy System for Next-generation Turbine Applications
SBC: QUESTEK INNOVATIONS LLC Topic: 1QuesTek Innovations, a leader in Integrated Computational Materials Engineering (ICME), will lead a strong team of experts in computational materials design, additive manufacturing, coating technology, and turbine design/manufacturing to design and develop a comprehensive solution for a next-generation turbine blade alloy and coating system capable of sustained operation at 1300°C. Concurrent des ...
SBIR Phase I 2021 Department of EnergyARPA-E -
Concurrent Design of a Multimaterial Niobium Alloy System for Next-generation Turbine Applications
SBC: QUESTEK INNOVATIONS LLC Topic: 1QuesTek Innovations, a leader in Integrated Computational Materials Engineering (ICME), will lead a strong team of experts in computational materials design, additive manufacturing, coating technology, and turbine design/manufacturing to design and develop a comprehensive solution for a next-generation turbine blade alloy and coating system capable of sustained operation at 1300°C. Concurrent des ...
SBIR Phase II 2021 Department of EnergyARPA-E -
High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off
SBC: MICROLINK DEVICES INC Topic: DEFOA0000941"In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...
SBIR Phase II 2013 Department of EnergyARPA-E -
High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off [Phase IIS]
SBC: MICROLINK DEVICES INC Topic: 1In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...
SBIR Phase II 2014 Department of EnergyARPA-E -
High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off
SBC: MICROLINK DEVICES INC Topic: 1In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...
SBIR Phase I 2013 Department of EnergyARPA-E