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Award Data
The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.
Download all SBIR.gov award data either with award abstracts (290MB)
or without award abstracts (65MB).
A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.
The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.
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A Low-Cost, High-Performance Colloidal Quantum Dot LWIR FPA for Hyperspectral Imaging
SBC: SIVANANTHAN LABORATORIES, INC. Topic: CBD13105The primary goal of this proposed work is to develop a long wave infrared (LWIR) colloidal quantum dot (CQD)-based focal plane array (FPA) in order to significantly reduce the cost of LWIR hyperspectral imagers. In order to realize this goal, it will first be necessary to successfully fabricate and demonstrate the performance of novel LWIR HgTe CQD detector arrays. This will be accomplished thro ...
SBIR Phase I 2013 Department of DefenseOffice for Chemical and Biological Defense -
Detection of Liquid Contaminants on Surfaces Using Hyperspectral Imaging
SBC: EPIR TECHNOLOGIES INC Topic: CBD12104Quick detection of Chemical/Biological (CB) agents in the field can provide critical reconnaissance and contamination avoidance. CB agents pose a serious threat to both civilian and military sectors, and present techniques rely on dangerous collection methods, active measurement through external infrared (IR) sources, and/or are time-consuming. EPIR proposes to provide critically needed improvemen ...
SBIR Phase I 2013 Department of DefenseOffice for Chemical and Biological Defense -
High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off
SBC: MICROLINK DEVICES INC Topic: 1In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...
SBIR Phase I 2013 Department of EnergyARPA-E -
High-Power Vertical-Junction Field-Effect Transistors Fabricated on Low-Dislocation-Density GaN by Epitaxial Lift-Off
SBC: MICROLINK DEVICES INC Topic: DEFOA0000941"In this program, we will develop a breakthrough technology that will enable wafer-scale epitaxial lift-off (ELO) of GaN power device heterostructures from low-dislocation-density bulk GaN substrates. This technology will be used to provide a low-cost vertical junction field effect transistors (VJFETs) with high breakdown voltage (greater than 1,200 V) and high current capability (greater than 100 ...
SBIR Phase II 2013 Department of EnergyARPA-E