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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. THIN FILM WSE2 PHOTOELECTRODES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    A PRIMARY LIMITATION OF PHOTOELECTROCHEMICAL CELLS IS PHOTOCORROSION OF ELECTRODE MATERIALS. ONE SOLUTION TO THISPROBLEM HAS BEEN TO APPLY ELABORATE CONDUCTING POLYMERIC COATINGS TO SENSITIVE ELECTRODES. AN ALTERNATIVE IS TO USE CORROSION RESISTANT ELECTRODE MATERIALS. GROUP VI METAL DICHALCOGENIDES, AND TUNGSTEN DISELENIDE (WSE2) IN PARTICULAR, HAVE SHOWN PROMISE AS INTRINSICALLY CORROSION RESIST ...

    SBIR Phase I 1990 Department of Energy
  2. CW LASER MODULATOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    RECENT DEVELOPMENTS IN OPTICAL COMMUNICATION TECHNOLOGY ARE VERY ENCOURAGING FOR THE POTENTIAL OPERATION OF OPTICAL SATELLITE CROSSLINKS. MOST NOTABLE IS THE DEVELOPMENT OF HIGH EFFICIENCY ND:YAG RING LASERS WHICH WOULD BE ATTRACTIVE TRANSMITTERS IF WIDE BANDWIDTH EXTERNAL PHASE MODULATORS COULD BE DEVELOPED. A TRAVELING-WAVE CONFIGURATION GIVES THE MAXIMUM BANDWIDTH FOR ELECTRO-OPTIC MODULATORS. ...

    SBIR Phase I 1990 Department of DefenseAir Force
  3. SCHOTTKY AND OHMIC CONTACTS FOR B-SILICON CARBIDE

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    HIGH POWER SEMICONDUCTORS USING SILICON AND GAAS ARE LIMITED TO ENVIRONMENTS THAT ARE LESS THAN 300 DEG C IN TEMPERATURE DUE TO LOW BANDGAPS, LOW BREAKDOWN FIELDS AND LOW THERMAL CONDUCTIVITIES. 3C-SIC(B-SIC) HAS BEEN IDENTIFIED AS A MATERIAL WITH EXCELLENT POTENTIAL TO FULFILL THE REQUIREMENTS OF A HIGH POWER, HIGH TEMPERATURE SEMICONDUCTOR WITH HIGH RADIATION HARDNESS. THE KEY TO DEVELOPING DEVI ...

    SBIR Phase I 1990 Department of DefenseAir Force
  4. PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION OF YTTRIUM BARIUM COPPER OXIDE SUPERCONDUCTING MATERIAL

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE REPRODUCIBLE CRYSTAL GROWTH OF THIN FILMS WITH THE CORRECT STOICHIOMETRY AND APPROPRIATE MORPHOLOGY IS THE KEY TO THE COMMERCIALIZATION OF DEVICES INCORPORATING THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS. MOCVD HAS THE POTENTIAL TO MEET THESE NEEDS COUPLED WITH RELATIVE EASE OF SCALING TOMANUFACTURING VOLUMES. HOWEVER, RECENT WORK ON MOCVD HAS BEEN PLAGUED BY TWO MAJOR LIMITATIONS: (1.) FILMS ...

    SBIR Phase I 1990 National Science Foundation
  5. DIAMOND X-RAY DETECTOR

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    A NOVEL DIAMOND DETECTOR FOR USE IN THE SOFT X-RAY TO THE VACUUM ULTRAVIOLET IS PROPOSED. THIS X-RAY DETECTOR IS BASED ON THE USE OF A DIAMOND FILM AS THE ACTIVE DETECTOR ELEMENT DUE TO DIAMOND'S HIGH INTRINSIC RESISTIVITY (LOW DARK CURRENT), LARGE CARRIER MOBILITIES, HIGH SATURATEDCARRIER DRIFT VELOCITY AND RADIATION AND CHEMICAL CORROSION RESISTANT CHARACTERISTICS. BECAUSE OF THESE CHARACTERISTI ...

    SBIR Phase I 1990 Department of Energy
  6. PHOTOCONDUCTIVE SWITCH FOR PULSED POWER HIGH FIELD GRADIENT LINAC'S

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    ULTRAFAST SOLID STATE PHOTOCONDUCTIVE SWITCHES MAY NOW MAKE POSSIBLE PULSED ELECTRIC FIELDS ON THE ORDER OF 1GV/M ON TIME SCALES OF 1-100 PICOSECONDS. VOLTAGE GRADIENTS OF THISMAGNITUDE ARE BECOMING POSSIBLE THROUGH ADVANCES IN TRANSMISSION LINE DESIGN AND ULTRAFAST PHOTOCONDUCTIVE POWERSWITCHING TECHNOLOGY AND WILL PERMIT SIGNIFICANT ADVANCES INPRODUCING HIGHER ENERGY, COMPACT LINEAR ACCELERATORS ...

    SBIR Phase I 1990 National Science Foundation
  7. GROUP II FLUORIDE COATED SCINTILLATING OPTICAL FIBERS

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    WE PROPOSE TO DEVELOP NOVEL INORGANIC SCINTILLATING FIBERS FOR USE IN IONIZING RADIATION IMAGING DETECTORS FOR RESEARCH, MEDICINE AND INDUSTRY, ESPECIALLY IN APPARATUS FORIMAGING X-RAYS, BETA AND ALPHA PARTICLES. IN PHASE I WE WILL USE METAL-ORGANIC CHEMICAL VAPOR DEPOSITION TECHNOLOGY TO COAT DISCRETE LENGTHS OF MECHANICALLY ROBUST QUARTZ OPTICAL FIBERS (SUBSTRATES) WITH THIN FILMS OF INORGANIC C ...

    SBIR Phase I 1990 National Science Foundation
  8. NONLINEAR POLYMER ETALON FOR HIGH RESOLUTION OPTICAL COMPUTING

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    THE USE OF OPTICAL SYSTEMS IN HIGH SPEED SIGNAL PROCESSING APPLICATIONS IS DESTINED BECAUSE OF THE OVERWHELMING ADVANTAGES OF PARALLEL DATA TRANSMISSION. MANY APPLICATIONS REQUIRE NONLINEAR TRANSFORMATIONS TO BE PERFORMED IN PARALLEL AT HIGH SPEED AND RESOLUTION. THE USE OF ORGANIC MATERIALS WITH LARGE OPTICAL NONLINEARITIES IS PARTICULARLY ATTRACTIVE BECAUSE OF THEIR FAST RESPONSE, BROADBAND TRAN ...

    SBIR Phase I 1990 Department of DefenseNavy
  9. NOVEL MERCURY CADMIUM TELLURIDE GROWTH PROCESS

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    MERCURY CADMIUM TELLURIDE (MCT) ALLOYS ARE OF MAJOR IMPORTANCE FOR NONCRYOGENICALLY COOLED 1.0 TO 16.0 MU M (IR)DETECTOR ARRAYS. WIDESPREAD DEPLOYMENT OF MCT ARRAYS BASED ON HIGH SENSITIVITY PHOTODIODES HAS BEEN SLOWED BY THE DEARTH OF REPEATABLE GROWTH PROCESSES CAPABLE OF PRODUCING HIGH QUALITY FILMS AND DEVICES WITH ABRUPT OR CONTROLLED JUNCTIONS. A NEW UNASSISTED PYROLYTIC METAL ORGANIC CHEMIC ...

    SBIR Phase I 1990 National Aeronautics and Space Administration
  10. GROUP IV SEMICONDUCTOR ATOMIC LAYER EPITAXY

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    WIDESPREAD APPLICATION OF HIGH PERFORMANCE DEVICES BASED ON III-V, IV-IV, OR DIAMOND COMPOUND SEMICONDUCTORS WILL DEPEND ON THE DEVELOPMENT OF MANUFACTURING METHODS. RECENTLY, DR. MAX YODER OF ONR PROPOSED A RADICALLY NEW GROWTH SEQUENCE APPLICABLE TO THE GROUP IV SEMICONDUCTORS IN GENERAL AND TO DIAMOND IN PARTICULAR. FOR DIAMOND, IT IS ANTICIPATED THAT ALTERNATE INTRODUCTION OF CH4 AND CF4 TO TH ...

    SBIR Phase I 1990 Department of DefenseNavy
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