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Award Data

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The Award database is continually updated throughout the year. As a result, data for FY23 is not expected to be complete until September, 2024.

Download all SBIR.gov award data either with award abstracts (290MB) or without award abstracts (65MB). A data dictionary and additional information is located on the Data Resource Page. Files are refreshed monthly.

The SBIR.gov award data files now contain the required fields to calculate award timeliness for individual awards or for an agency or branch. Additional information on calculating award timeliness is available on the Data Resource Page.

  1. NOVEL ORGANOSELENIUM SOURCE REAGENTS FOR MOCVD OF ZINC SELENIDE

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    ZINC SELENIDE (ZNSE) HAS IMPORTANT POTENTIAL APPLICATIONS ASA MATERIAL FOR VISIBLE LIGHT EMITTING DEVICES AND SHORT WAVELENGTH LASERS FOR DISPLAY APPLICATIONS. METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) OF ZNSE IS THE MOST PROMISING PRODUCTION METHOD BUT IS HAMPERED BY ITS USE OF HYDROGEN SELENIDE, AN EXTREMELY HAZARDOUS AND TOXIC GAS. HYDROGEN SELENIDE ALSO HAS SIGNIFICANT PERFORMANCE DISADVA ...

    SBIR Phase I 1992 National Science Foundation
  2. NOVEL TITANIUM SOURCE REAGENTS FOR INDIUM PHOSPHIDE DOPING

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    IN THE NEXT DECADE INDIUM PHOSPHIDE BASED LASERS ARE EXPECTED TO BE CRITICALLY IMPORTANT IN INTEGRATED ELECTROOPTIC DEVICES AND FIBER OPTICS COMMUNICATION DUE TO THEIR HIGH SPEED AND BANDGAP IN THE NEAR INFRARED SPECTRAL REGION. SEMI-INSULATING TITANIUM DOPED INDIUM PHOSPHIDE IS REQUIRED FOR FABRICATION OF HIGH SPEED, HIGH POWER, LOW THRESHOLD, LONG LASTING LASERS WITH LOW LEAKAGE CURRENTS. THIS M ...

    SBIR Phase I 1992 National Science Foundation
  3. BARRIER LAYER FOR EPITAXIAL BATIO3 FILMS ON SILICON

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    SINGLE CRYSTAL BATIO3 HAS ELECTRO-OPTIC AND PHOTOREFRACTIVE PROPERTIES THAT ARE AMONG THE MOST DESIRABLE OF ALL INORGANIC MEDIA. THE MATERIAL ALSO POSSESSES FERROELECTRIC PROPERTIES AND AN EXCEPTIONALLY HIGH DIELECTRIC CONSTANT, WHICH MAKE BATIO3 FILMS HIGHLY ATTRACTIVE FOR RADIATION HARD AND DRAM ELECTRONIC MEMORIES. USE OF BATIO3 FILMS FOR INTEGRATED ELECTRO-OPTICS WILL REQUIRE LOW OPTICAL LOSSE ...

    SBIR Phase I 1992 Department of DefenseAir Force
  4. Migration Enhanced of (SiC)x(AIN)1-x

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The need for compact solid state ultraviolet light sources includes clinical light sources for a variety of surgeries, analytical instrumentation sources and communications systems based on shorter wavelengths that will be able to handle higher information densities. Such advanced optoelectric applications demand totally new materials. Of those available, silicon carbide is the most promising for ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  5. ORGANOARSINE REPLACEMENTS FOR ARSINE IN MOCVD

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    ORGANOMETALLIC VAPOR PHASE EPITAXY (OMVPE) IS A PROMISING TECHNIQUE FOR PRODUCING ULTRAHIGH PURITY III-V COMPOUND SEMICONDUCTOR. OMVPE CAN PRODUCE COMPLEX LAYERED STRUCTURES WITH THE ABRUPT INTERFACES REQUIRED FOR ADVANCED ELECTRONIC AND PHOTONIC DEVICES. UNFORTUNATELY, OMVPE CURRENTLY REQUIRES EXTREMELY TOXIC AND/OR PYROPHORIC GASES STORED UNDER PRESSURE IN LARGE VOLUMES. THESE GASES REPRESENT SE ...

    SBIR Phase I 1992 Department of DefenseArmy
  6. BIMETALLIC SOURCE REAGENTS FOR THIN FILM DEPOSITION OF LEAD TITANATE AND PZT

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) HAS BECOME A SUCCESSFUL THIN FILM GROWTH TECHNIQUE DUE TO ITS INHERENT CONTROL OVER FILM COMPOSITION, PURITY, UNIFORMITY AND DEPOSITION RATE. THIN FILM TECHNOLOGY FOR FERROELECTRIC MATERIALS SUCH AS LEAD TITANATE AND PZT IS IN GREAT DEMAND DUE TO MANY APPLICATIONS IN PEIZOELECTRIC AND OPTOELECTRIC DEVICES. THE ELECTRONIC PROPERTIES OF THE THIN FILM AR ...

    SBIR Phase I 1992 Department of DefenseArmy
  7. A NOVEL FABRICATION METHOD FOR DIAMOND COMPOSITES

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    DIAMOND AND COPPER ARE UNIQUE IN THEIR ABILITY TO EFFICIENTLY CONDUCT HEAT, MAKING THEM PREMIER MATERIALS FOR ELECTRONIC APPLICATIONS FOR WHICH HEAT REMOVAL IS CRITICAL TO SYSTEM PERFORMANCE. DIFFERENCES IN THEIR OTHER PROPERTIES MAKE IT ATTRACTIVE TO COMBINE THESE TWO MATERIALS INTO A DIAMOND/COPPER COMPOSITE THAT HAS IMPROVED PROPERTIES OVER THOSE OF COPPER ALONE. DIAMONDS OFFER A COST-EFFECTIVE ...

    SBIR Phase I 1992 Department of Energy
  8. Gas Microcontroller

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    Many key steps in semiconductor "chip" manufacture utilize gases to form thin films which are critical to both device performance and cost. Over $2 billion worth of equipment, materials and peripherals are now sold annually to the semiconductor manufacturers who use gas phase processing. As increased memory demands escalate the need for thinner films, higher quality and lower costs, ever more exac ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  9. Low Loss Cryogenic Switching for Electronic Warfare

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    High temperature superconducting (HTSC) materials offer the potential for major cost and performance advantages in advanced high frequency communications and radar sytems. Key to the use of these materials in subsystems is the fabrication of components, especially low loss switches, which can replace standard components. Advanced Technology Materials, Inc., in conjunction with Harris Corporation, ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
  10. HTSCs as Electrodes in DRAMs

    SBC: Advanced Technologies/Laboratories Intl            Topic: N/A

    The continuing drive toward increased circuit densities in dynamic random access memories (DRAMs) has spurred great interest in new dielectric materials that permit greater storage capacitor charge density. Ferroelectrics are particularly attractive because of their intrinsically large dielectric constant, and non-volatile and radiation-hard memory capability. Application of ferroelectrics in micr ...

    SBIR Phase I 1992 Department of DefenseMissile Defense Agency
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